Direct-gap reduction and valence-band splitting of ordered indirect-gap AlI studied by dark-field spectroscopy

M. Schubert, B. Rheinländer, E. Franke, I. Pietzonka, J. Škriniarová, V. Gottschalch

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

The order-dependent valence-band splitting and direct-gap reduction in spontaneously ordered indirect-gap AlIn(Formula presented) are determined by dark-field spectroscopy at room temperature. Similar to direct-gap GaIn(Formula presented) both parameters depend on the degree of long-range (Formula presented)-type order. We obtain the direct gap for disordered and the order-induced changes of the spin-orbit splitting and the crystal-field splitting normalized to the direct-gap change for perfectly ordered AlIn(Formula presented).

Original languageEnglish (US)
Pages (from-to)17616-17619
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number24
DOIs
StatePublished - Jan 1 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Direct-gap reduction and valence-band splitting of ordered indirect-gap AlI studied by dark-field spectroscopy'. Together they form a unique fingerprint.

  • Cite this