Doping and characterization of erbium-implanted GaN

J. F. Torvik; R. J. Feuerstein; C. H. Qiu; J. I. Pankove; F. Namavar

doi:10.1557/proc-482-579

Doping and characterization of erbium-implanted GaN

J. F. Torvik, R. J. Feuerstein, C. H. Qiu, J. I. Pankove, F. Namavar

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with 1/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Er-absorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.

Original language	English (US)
Pages (from-to)	579-584
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-579
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Doping and characterization of erbium-implanted GaN",

abstract = "Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with 1/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Er-absorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.",

author = "Torvik, {J. F.} and Feuerstein, {R. J.} and Qiu, {C. H.} and Pankove, {J. I.} and F. Namavar",

year = "1997",

doi = "10.1557/proc-482-579",

language = "English (US)",

volume = "482",

pages = "579--584",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

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TY - JOUR

T1 - Doping and characterization of erbium-implanted GaN

AU - Torvik, J. F.

AU - Feuerstein, R. J.

AU - Qiu, C. H.

AU - Pankove, J. I.

AU - Namavar, F.

PY - 1997

Y1 - 1997

N2 - Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with 1/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Er-absorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.

AB - Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with 1/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Er-absorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.

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DO - 10.1557/proc-482-579

M3 - Conference article

AN - SCOPUS:0031388257

SN - 0272-9172

VL - 482

SP - 579

EP - 584

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Doping and characterization of erbium-implanted GaN

Abstract

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