Doping and characterization of erbium-implanted GaN

J. F. Torvik, R. J. Feuerstein, C. H. Qiu, J. I. Pankove, F. Namavar

Research output: Contribution to journalConference article

7 Scopus citations

Abstract

Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with 1/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Er-absorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.

Original languageEnglish (US)
Pages (from-to)579-584
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Doping and characterization of erbium-implanted GaN'. Together they form a unique fingerprint.

  • Cite this

    Torvik, J. F., Feuerstein, R. J., Qiu, C. H., Pankove, J. I., & Namavar, F. (1997). Doping and characterization of erbium-implanted GaN. Materials Research Society Symposium - Proceedings, 482, 579-584.