Doping effects on ablation enhancement in femtosecond laser irradiation of silicon

Juqiang Fang, Lan Jiang, Qiang Cao, Kaihu Zhang, Yanping Yuan, Yongfeng Lu

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We have conducted an experimental investigation on highly efficient femtosecond laser micromachining of silicon through N-type doping. We found that the material removal amount has a close relationship with the doping concentration rather than with the doping types. The amount of material removal was enhanced gradually as doping densities increased. When the doping density reached higher than 1018cm-3, the ablation threshold was considerably reduced, up to 15%-20%. The results of the experiment indicate that the high density of initial free electrons by doping is the fundamental reason for efficiency improvement, and bandgap shrinkage also plays an important role. The electrons are excited more easily from the valance bandto the conduction band and acquire higher initial kinetic energy, which then promotes the material ablation process.

Original languageEnglish (US)
Pages (from-to)3897-3902
Number of pages6
JournalApplied optics
Issue number18
DOIs
StatePublished - Jun 20 2014

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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