Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

V. Darakchieva, T. Paskova, M. Schubert, P. P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B. A. Haskell, P. T. Fini, J. S. Speck, S. Nakamura

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


We have studied phonons in two types of anisotropically strained GaN films: c-plane GaN films grown on a-plane sapphire and a-plane GaN films grown on r-plane sapphire. The anisotropic strain in the films is determined by high-resolution X-ray diffraction (HRXRD) in different measuring geometries and the phonon parameters have been assessed by generalized infrared spectroscopic ellipsometry (GIRSE). The effect of strain anisotropy on GaN phonon frequencies is presented and the phonon deformation potentials aA1 (TO), bA1 (TO), cE1 (TO) and cE1 (LO) are determined.

Original languageEnglish (US)
Pages (from-to)233-238
Number of pages6
JournalJournal of Crystal Growth
Issue number1
StatePublished - Mar 1 2007


  • A1. High-resolution X-ray diffraction
  • A1. Infrared spectroscopic ellipsometry
  • A1. Phonons
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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