Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

V. Darakchieva; T. Paskova; M. Schubert; P. P. Paskov; H. Arwin; B. Monemar; D. Hommel; M. Heuken; J. Off; B. A. Haskell; P. T. Fini; J. S. Speck; S. Nakamura

doi:10.1016/j.jcrysgro.2006.11.023

Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

V. Darakchieva, T. Paskova, M. Schubert, P. P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B. A. Haskell, P. T. Fini, J. S. Speck, S. Nakamura

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We have studied phonons in two types of anisotropically strained GaN films: c-plane GaN films grown on a-plane sapphire and a-plane GaN films grown on r-plane sapphire. The anisotropic strain in the films is determined by high-resolution X-ray diffraction (HRXRD) in different measuring geometries and the phonon parameters have been assessed by generalized infrared spectroscopic ellipsometry (GIRSE). The effect of strain anisotropy on GaN phonon frequencies is presented and the phonon deformation potentials a_{A1 (TO)}, b_{A1 (TO)}, c_{E1 (TO)} and c_{E1 (LO)} are determined.

Original language	English (US)
Pages (from-to)	233-238
Number of pages	6
Journal	Journal of Crystal Growth
Volume	300
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.11.023
State	Published - Mar 1 2007

Keywords

A1. High-resolution X-ray diffraction
A1. Infrared spectroscopic ellipsometry
A1. Phonons
B1. GaN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2006.11.023

Cite this

@article{fe3b1d3d41a44bd894ff76c3ddc6c2d9,

title = "Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers",

abstract = "We have studied phonons in two types of anisotropically strained GaN films: c-plane GaN films grown on a-plane sapphire and a-plane GaN films grown on r-plane sapphire. The anisotropic strain in the films is determined by high-resolution X-ray diffraction (HRXRD) in different measuring geometries and the phonon parameters have been assessed by generalized infrared spectroscopic ellipsometry (GIRSE). The effect of strain anisotropy on GaN phonon frequencies is presented and the phonon deformation potentials aA1 (TO), bA1 (TO), cE1 (TO) and cE1 (LO) are determined.",

keywords = "A1. High-resolution X-ray diffraction, A1. Infrared spectroscopic ellipsometry, A1. Phonons, B1. GaN",

author = "V. Darakchieva and T. Paskova and M. Schubert and Paskov, {P. P.} and H. Arwin and B. Monemar and D. Hommel and M. Heuken and J. Off and Haskell, {B. A.} and Fini, {P. T.} and Speck, {J. S.} and S. Nakamura",

note = "Funding Information: V. Darakchieva would like to acknowledge support from the Swedish Research Council (VR) under contract 2005-5054.",

year = "2007",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2006.11.023",

language = "English (US)",

volume = "300",

pages = "233--238",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

AU - Darakchieva, V.

AU - Paskova, T.

AU - Schubert, M.

AU - Paskov, P. P.

AU - Arwin, H.

AU - Monemar, B.

AU - Hommel, D.

AU - Heuken, M.

AU - Off, J.

AU - Haskell, B. A.

AU - Fini, P. T.

AU - Speck, J. S.

AU - Nakamura, S.

N1 - Funding Information: V. Darakchieva would like to acknowledge support from the Swedish Research Council (VR) under contract 2005-5054.

PY - 2007/3/1

Y1 - 2007/3/1

N2 - We have studied phonons in two types of anisotropically strained GaN films: c-plane GaN films grown on a-plane sapphire and a-plane GaN films grown on r-plane sapphire. The anisotropic strain in the films is determined by high-resolution X-ray diffraction (HRXRD) in different measuring geometries and the phonon parameters have been assessed by generalized infrared spectroscopic ellipsometry (GIRSE). The effect of strain anisotropy on GaN phonon frequencies is presented and the phonon deformation potentials aA1 (TO), bA1 (TO), cE1 (TO) and cE1 (LO) are determined.

AB - We have studied phonons in two types of anisotropically strained GaN films: c-plane GaN films grown on a-plane sapphire and a-plane GaN films grown on r-plane sapphire. The anisotropic strain in the films is determined by high-resolution X-ray diffraction (HRXRD) in different measuring geometries and the phonon parameters have been assessed by generalized infrared spectroscopic ellipsometry (GIRSE). The effect of strain anisotropy on GaN phonon frequencies is presented and the phonon deformation potentials aA1 (TO), bA1 (TO), cE1 (TO) and cE1 (LO) are determined.

KW - A1. High-resolution X-ray diffraction

KW - A1. Infrared spectroscopic ellipsometry

KW - A1. Phonons

KW - B1. GaN

UR - http://www.scopus.com/inward/record.url?scp=33847263409&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847263409&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.11.023

DO - 10.1016/j.jcrysgro.2006.11.023

M3 - Article

AN - SCOPUS:33847263409

SN - 0022-0248

VL - 300

SP - 233

EP - 238

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this