Effect of disorder on the resistivity of CoFeCrAl films

Y. Jin, R. Skomski, P. Kharel, S. R. Valloppilly, D. J. Sellmyer

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Structural and electron-transport properties of thin films of the ferrimagnetic Heusler compound CoFeCrAl have been investigated to elucidate structure-property relationships. The alloy is, ideally, a spin-gapless semiconductor, but structural disorder destroys the spin-gapless character and drastically alters the transport behavior. Two types of CoFeCrAl films were grown by magnetron sputtering deposition at 973 K, namely polycrystalline films on Si substrates and epitaxial films on MgO (001) substrates. The resistivity decreases with increasing temperature, with relatively small temperature coefficients of -0.19 μΩcm/K for the polycrystalline films and -0.12 μΩcm/K for the epitaxial films. The residual resistivity of the polycrystalline films deposited on Si is higher than that of the epitaxial film deposited on MgO, indicating that the polycrystalline films behave as so-called dirty metals.

Original languageEnglish (US)
Article number055834
JournalAIP Advances
Volume7
Issue number5
DOIs
StatePublished - May 1 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Jin, Y., Skomski, R., Kharel, P., Valloppilly, S. R., & Sellmyer, D. J. (2017). Effect of disorder on the resistivity of CoFeCrAl films. AIP Advances, 7(5), [055834]. https://doi.org/10.1063/1.4978591