Effect of implantation energy on surface pitting of SIMOX

F. Namavar, E. Cortesi, J. M. Manke, N. M. Kalkhoran, B. L. Buchanan, R. F. Pinizzotto, H. Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


A systematic study to determine the effect of dose and dose rate on implanting oxygen at 80 and 160 keV is reported. Samples were produced by implanting oxygen into p-type Si(100) wafers at dose rates of 5-60 μA/cm2 and doses from 3 × 1017 to 1.6 × 1018 O+/cm2 using an Eaton NV10-160 implanter. Samples were studied using cross-sectional transmission electron microscopy, scanning electron microscopy, and Rutherford backscattering spectroscopy. The results obtained suggest that dose, dose rate, and energy thresholds for pit formation in the Si top layer of SIMOX (separation by implanted oxygen) samples exist. For example, for doses of both 3 × 1017 and 4 × 1017 O+/cm2 the dose rate threshold is between 50 and 60 μA/cm2. It is also shown that the threshold for pit formation can be increased by implanting through an oxide capping layer.

Original languageEnglish (US)
Title of host publication1991 IEEE International SOI Conference Proceedings
PublisherPubl by IEEE
Number of pages2
ISBN (Print)0780301846
StatePublished - 1992
Event1991 IEEE International SOI Conference - Vail Valley, CO, USA
Duration: Oct 1 1991Oct 3 1991

Publication series

Name1991 IEEE International SOI Conference Proceedings


Other1991 IEEE International SOI Conference
CityVail Valley, CO, USA

ASJC Scopus subject areas

  • Engineering(all)


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