Effect of indium impurities on the de Haas-van Alphen effect in lead

P. J. Tobin, D. J. Sellmyer, B. L. Averbach

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Abstract

Several aspects of the effect of indium impurities on the de Haas-van Alphen effect in lead were investigated. Studies were made of the nature of several orbits in the third zone Fermi surface of pure lead and the effects of alloying on these orbits. Rigid band theory is able to account for changes in cross-sectional area for one of the orbits. Some data on the scattering temperature obtained from amplitude studies are also reported.

Original languageEnglish (US)
Pages (from-to)1721-1732
Number of pages12
JournalJournal of Physics and Chemistry of Solids
Volume32
Issue number8
DOIs
StatePublished - 1971

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ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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