Effects of oxygen "ashing" on indium-tin oxide thin films

B. N. De, Yong Zhao, P. G. Snyder, J. A. Woollam, T. J. Coutts, X. Li

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Indium-tin oxide (ITO) films were prepared by d.c. sputtering of ITO in an oxygen atmosphere, and measurements of resistivity, thickness, and optical constants were made. The resistivity was found to increase at first and then decrease substantially with ashing in an oxygen plasma. The basic optical gap is relatively unaffected by ashing, but impurity band absorption increased substantially.

Original languageEnglish (US)
Pages (from-to)647-653
Number of pages7
JournalSurface and Coatings Technology
Issue numberPART 2
StatePublished - Dec 15 1989

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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