Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide films

W. K. Choi; C. K. Choo; Y. F. Lu

doi:10.1063/1.363576

Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide films

W. K. Choi, C. K. Choo, Y. F. Lu

Research output: Contribution to journal › Review article › peer-review

17 Scopus citations

Abstract

An investigation of the effect of rapid thermal annealing (RTA) on the electrical properties of if sputtered silicon oxide films was carried out. The films were prepared with the argon sputtering pressure varied from 2 to 10 mTorr. It was found that the insulating property of the films improved when deposited at lower sputtering pressure. The as-deposited film with the highest conductivity was selected for the RTA experiments. It was found that RTA at T>900°C or at longer times reduces the interface trapped charge (D_it) and the fixed charge (Q_f) densities to 1.8×10¹² eV^-1 cm^-2 and 1.5×10¹² cm^-2, respectively. We concluded that RTA at a longer period of time is more effective in improving the film quality than raising the annealing temperature. Postmetallization anneal reduces D_it further to 3.5×10¹¹ eV^-1 cm^-2.

Original language	English (US)
Pages (from-to)	5837-5842
Number of pages	6
Journal	Journal of Applied Physics
Volume	80
Issue number	10
DOIs	https://doi.org/10.1063/1.363576
State	Published - Nov 15 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide films",

abstract = "An investigation of the effect of rapid thermal annealing (RTA) on the electrical properties of if sputtered silicon oxide films was carried out. The films were prepared with the argon sputtering pressure varied from 2 to 10 mTorr. It was found that the insulating property of the films improved when deposited at lower sputtering pressure. The as-deposited film with the highest conductivity was selected for the RTA experiments. It was found that RTA at T>900°C or at longer times reduces the interface trapped charge (Dit) and the fixed charge (Qf) densities to 1.8×1012 eV-1 cm-2 and 1.5×1012 cm-2, respectively. We concluded that RTA at a longer period of time is more effective in improving the film quality than raising the annealing temperature. Postmetallization anneal reduces Dit further to 3.5×1011 eV-1 cm-2.",

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T1 - Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide films

AU - Choi, W. K.

AU - Choo, C. K.

AU - Lu, Y. F.

PY - 1996/11/15

Y1 - 1996/11/15

N2 - An investigation of the effect of rapid thermal annealing (RTA) on the electrical properties of if sputtered silicon oxide films was carried out. The films were prepared with the argon sputtering pressure varied from 2 to 10 mTorr. It was found that the insulating property of the films improved when deposited at lower sputtering pressure. The as-deposited film with the highest conductivity was selected for the RTA experiments. It was found that RTA at T>900°C or at longer times reduces the interface trapped charge (Dit) and the fixed charge (Qf) densities to 1.8×1012 eV-1 cm-2 and 1.5×1012 cm-2, respectively. We concluded that RTA at a longer period of time is more effective in improving the film quality than raising the annealing temperature. Postmetallization anneal reduces Dit further to 3.5×1011 eV-1 cm-2.

AB - An investigation of the effect of rapid thermal annealing (RTA) on the electrical properties of if sputtered silicon oxide films was carried out. The films were prepared with the argon sputtering pressure varied from 2 to 10 mTorr. It was found that the insulating property of the films improved when deposited at lower sputtering pressure. The as-deposited film with the highest conductivity was selected for the RTA experiments. It was found that RTA at T>900°C or at longer times reduces the interface trapped charge (Dit) and the fixed charge (Qf) densities to 1.8×1012 eV-1 cm-2 and 1.5×1012 cm-2, respectively. We concluded that RTA at a longer period of time is more effective in improving the film quality than raising the annealing temperature. Postmetallization anneal reduces Dit further to 3.5×1011 eV-1 cm-2.

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Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide films

Abstract

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