Electrical properties of ZnO- BaTiO3 -ZnO heterostructures with asymmetric interface charge distribution

V. M. Voora; T. Hofmann; M. Brandt; M. Lorenz; N. Ashkenov; M. Grundmann; M. Schubert

doi:10.1063/1.3211914

Electrical properties of ZnO- BaTiO₃ -ZnO heterostructures with asymmetric interface charge distribution

V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, M. Schubert

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report on capacitance-voltage, current-voltage, Sawyer-Tower, and transient current switching measurements for a ZnO- BaTiO₃ -ZnO heterostructure deposited on (001) silicon by using pulsed laser deposition. The triple-layer structure reveals asymmetric capacitance- and current-voltage hysteresis and cycling-voltage dependent Sawyer-Tower polarization drift. We explain our findings by coupling of the ferroelectric (BaTiO₃) and piezoelectric (ZnO) interface charges and parallel polarization orientation of the ZnO layers causing asymmetric space charge region formation under positive and negative bias. The transient current characteristics suggest use of this structure as nonvolatile memory device.

Original language	English (US)
Article number	082902
Journal	Applied Physics Letters
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.3211914
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3211914

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@article{e72571b2654343bead6d1883be4631c9,

title = "Electrical properties of ZnO- BaTiO3 -ZnO heterostructures with asymmetric interface charge distribution",

abstract = "We report on capacitance-voltage, current-voltage, Sawyer-Tower, and transient current switching measurements for a ZnO- BaTiO3 -ZnO heterostructure deposited on (001) silicon by using pulsed laser deposition. The triple-layer structure reveals asymmetric capacitance- and current-voltage hysteresis and cycling-voltage dependent Sawyer-Tower polarization drift. We explain our findings by coupling of the ferroelectric (BaTiO3) and piezoelectric (ZnO) interface charges and parallel polarization orientation of the ZnO layers causing asymmetric space charge region formation under positive and negative bias. The transient current characteristics suggest use of this structure as nonvolatile memory device.",

author = "Voora, {V. M.} and T. Hofmann and M. Brandt and M. Lorenz and N. Ashkenov and M. Grundmann and M. Schubert",

note = "Funding Information: We acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) within the Sonderforschunsgbereich “Functional Oxide Interfaces” (SFB 762 “Funktionalit{\"a}t Oxidischer Grenzfl{\"a}chen”), the CoE at UNL, the J.A. Woollam Foundation, and NSF MRSEC QSPIN (Grant No. DMR-0820521).",

year = "2009",

doi = "10.1063/1.3211914",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Electrical properties of ZnO- BaTiO3 -ZnO heterostructures with asymmetric interface charge distribution

AU - Voora, V. M.

AU - Hofmann, T.

AU - Brandt, M.

AU - Lorenz, M.

AU - Ashkenov, N.

AU - Grundmann, M.

AU - Schubert, M.

N1 - Funding Information: We acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) within the Sonderforschunsgbereich “Functional Oxide Interfaces” (SFB 762 “Funktionalität Oxidischer Grenzflächen”), the CoE at UNL, the J.A. Woollam Foundation, and NSF MRSEC QSPIN (Grant No. DMR-0820521).

PY - 2009

Y1 - 2009

N2 - We report on capacitance-voltage, current-voltage, Sawyer-Tower, and transient current switching measurements for a ZnO- BaTiO3 -ZnO heterostructure deposited on (001) silicon by using pulsed laser deposition. The triple-layer structure reveals asymmetric capacitance- and current-voltage hysteresis and cycling-voltage dependent Sawyer-Tower polarization drift. We explain our findings by coupling of the ferroelectric (BaTiO3) and piezoelectric (ZnO) interface charges and parallel polarization orientation of the ZnO layers causing asymmetric space charge region formation under positive and negative bias. The transient current characteristics suggest use of this structure as nonvolatile memory device.

AB - We report on capacitance-voltage, current-voltage, Sawyer-Tower, and transient current switching measurements for a ZnO- BaTiO3 -ZnO heterostructure deposited on (001) silicon by using pulsed laser deposition. The triple-layer structure reveals asymmetric capacitance- and current-voltage hysteresis and cycling-voltage dependent Sawyer-Tower polarization drift. We explain our findings by coupling of the ferroelectric (BaTiO3) and piezoelectric (ZnO) interface charges and parallel polarization orientation of the ZnO layers causing asymmetric space charge region formation under positive and negative bias. The transient current characteristics suggest use of this structure as nonvolatile memory device.

UR - http://www.scopus.com/inward/record.url?scp=69649084541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69649084541&partnerID=8YFLogxK

U2 - 10.1063/1.3211914

DO - 10.1063/1.3211914

M3 - Article

AN - SCOPUS:69649084541

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082902

ER -

Electrical properties of ZnO- BaTiO₃ -ZnO heterostructures with asymmetric interface charge distribution

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