Electro-optic Raman observation of low temperature phase transitions in ZnO-BaTiO 3-ZnO heterostructures

B. N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Temperature-dependent electro-optic Raman measurements performed on ZnO-BaTiO 3-ZnO heterostructures grown by pulsed laser deposition on (0001) sapphire reveal a high temperature phase transition point of BaTiO 3 resulting from the leakage current within the sample, a persisting ferroelectric phase as well as a voltage driven progressive structural change in the BaTiO 3 layer. Dielectric measurements confirm the cubic - tetragonal (384 K), tetragonal-orthorhombic (245 K), and orthorhombic- rhombohedral (131 K) phase transition points.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages401-402
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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