Electroluminescence from erbium and oxygen coimplanted GaN

J. T. Torvik; R. J. Feuerstein; J. I. Pankove; C. H. Qiu; F. Namavar

doi:10.1063/1.116892

Electroluminescence from erbium and oxygen coimplanted GaN

J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, F. Namavar

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Abstract

Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal-insulator-n-type) diodes is demonstrated. Erbium related electroluminescence at λ = 1.54 μm was detected under reverse bias after a postimplant anneal at 800°C for 45 min in flowing NH₃. The integrated light emission intensity showed a linear dependence on applied reverse drive current.

Original language	English (US)
Pages (from-to)	2098-2100
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	14
DOIs	https://doi.org/10.1063/1.116892
State	Published - Sep 30 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal-insulator-n-type) diodes is demonstrated. Erbium related electroluminescence at λ = 1.54 μm was detected under reverse bias after a postimplant anneal at 800°C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on applied reverse drive current.",

author = "Torvik, {J. T.} and Feuerstein, {R. J.} and Pankove, {J. I.} and Qiu, {C. H.} and F. Namavar",

year = "1996",

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T1 - Electroluminescence from erbium and oxygen coimplanted GaN

AU - Torvik, J. T.

AU - Feuerstein, R. J.

AU - Pankove, J. I.

AU - Qiu, C. H.

AU - Namavar, F.

PY - 1996/9/30

Y1 - 1996/9/30

N2 - Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal-insulator-n-type) diodes is demonstrated. Erbium related electroluminescence at λ = 1.54 μm was detected under reverse bias after a postimplant anneal at 800°C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on applied reverse drive current.

AB - Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal-insulator-n-type) diodes is demonstrated. Erbium related electroluminescence at λ = 1.54 μm was detected under reverse bias after a postimplant anneal at 800°C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on applied reverse drive current.

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Electroluminescence from erbium and oxygen coimplanted GaN

Abstract

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