Abstract
Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal-insulator-n-type) diodes is demonstrated. Erbium related electroluminescence at λ = 1.54 μm was detected under reverse bias after a postimplant anneal at 800°C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on applied reverse drive current.
Original language | English (US) |
---|---|
Pages (from-to) | 2098-2100 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 14 |
DOIs | |
State | Published - Sep 30 1996 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)