Electroluminescence from erbium and oxygen coimplanted GaN

J. T. Torvik, R. J. Feuerstein, J. I. Pankove, C. H. Qiu, F. Namavar

Research output: Contribution to journalArticle

68 Scopus citations

Abstract

Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal-insulator-n-type) diodes is demonstrated. Erbium related electroluminescence at λ = 1.54 μm was detected under reverse bias after a postimplant anneal at 800°C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on applied reverse drive current.

Original languageEnglish (US)
Pages (from-to)2098-2100
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number14
DOIs
StatePublished - Sep 30 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Torvik, J. T., Feuerstein, R. J., Pankove, J. I., Qiu, C. H., & Namavar, F. (1996). Electroluminescence from erbium and oxygen coimplanted GaN. Applied Physics Letters, 69(14), 2098-2100. https://doi.org/10.1063/1.116892