Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal-insulator-n-type) diodes is demonstrated. Erbium related electroluminescence at λ = 1.54 μm was detected under reverse bias after a postimplant anneal at 800°C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on applied reverse drive current.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)