Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry

Suraiya Nafis; Natale J. Ianno; Paul G. Snyder; William A. McGahan; Blaine Johs; John A Woollam

doi:10.1016/0040-6090(93)90101-T

Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry

Suraiya Nafis, Natale J. Ianno, Paul G. Snyder, William A. McGahan, Blaine Johs, John A Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The motivation for this work was to develop in-situ monitoring and control of electron cyclotron resonance (ECR) as an anisotropic etch doing minimal surface damage to electronic materials. We have used a modular rotating- analyzer spectroscopic ellipsometer in both the in-situ and ex-situ modes to investigate etching of Si, SiO₂, GaAs and InP, as well as GaAs/Al_1-xGa_xAs/GaAs and InP/In_1-xGa_xAs heterostructures. Etching was done using a 175 W ECR source with mixtures of CCl₂F₂ and either oxygen or insert gases in various flow ratios in order to prevent polymerization. The experimental variables in these experiments were the gas ratios, gas species, r.f. substrate bias voltage (power) and substrate temperature. Etching was found to create a thin damage region near the surface modeled ellipsometrically as crystalline-plus-amorphous semiconductor in a Bruggeman effective-medium mixture.

Original language	English (US)
Pages (from-to)	253-255
Number of pages	3
Journal	Thin Solid Films
Volume	233
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(93)90101-T
State	Published - Oct 12 1993

ASJC Scopus subject areas

Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

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title = "Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry",

abstract = "The motivation for this work was to develop in-situ monitoring and control of electron cyclotron resonance (ECR) as an anisotropic etch doing minimal surface damage to electronic materials. We have used a modular rotating- analyzer spectroscopic ellipsometer in both the in-situ and ex-situ modes to investigate etching of Si, SiO2, GaAs and InP, as well as GaAs/Al1-xGaxAs/GaAs and InP/In1-xGaxAs heterostructures. Etching was done using a 175 W ECR source with mixtures of CCl2F2 and either oxygen or insert gases in various flow ratios in order to prevent polymerization. The experimental variables in these experiments were the gas ratios, gas species, r.f. substrate bias voltage (power) and substrate temperature. Etching was found to create a thin damage region near the surface modeled ellipsometrically as crystalline-plus-amorphous semiconductor in a Bruggeman effective-medium mixture.",

author = "Suraiya Nafis and Ianno, {Natale J.} and Snyder, {Paul G.} and McGahan, {William A.} and Blaine Johs and Woollam, {John A}",

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doi = "10.1016/0040-6090(93)90101-T",

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T1 - Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry

AU - Nafis, Suraiya

AU - Ianno, Natale J.

AU - Snyder, Paul G.

AU - McGahan, William A.

AU - Johs, Blaine

AU - Woollam, John A

PY - 1993/10/12

Y1 - 1993/10/12

N2 - The motivation for this work was to develop in-situ monitoring and control of electron cyclotron resonance (ECR) as an anisotropic etch doing minimal surface damage to electronic materials. We have used a modular rotating- analyzer spectroscopic ellipsometer in both the in-situ and ex-situ modes to investigate etching of Si, SiO2, GaAs and InP, as well as GaAs/Al1-xGaxAs/GaAs and InP/In1-xGaxAs heterostructures. Etching was done using a 175 W ECR source with mixtures of CCl2F2 and either oxygen or insert gases in various flow ratios in order to prevent polymerization. The experimental variables in these experiments were the gas ratios, gas species, r.f. substrate bias voltage (power) and substrate temperature. Etching was found to create a thin damage region near the surface modeled ellipsometrically as crystalline-plus-amorphous semiconductor in a Bruggeman effective-medium mixture.

AB - The motivation for this work was to develop in-situ monitoring and control of electron cyclotron resonance (ECR) as an anisotropic etch doing minimal surface damage to electronic materials. We have used a modular rotating- analyzer spectroscopic ellipsometer in both the in-situ and ex-situ modes to investigate etching of Si, SiO2, GaAs and InP, as well as GaAs/Al1-xGaxAs/GaAs and InP/In1-xGaxAs heterostructures. Etching was done using a 175 W ECR source with mixtures of CCl2F2 and either oxygen or insert gases in various flow ratios in order to prevent polymerization. The experimental variables in these experiments were the gas ratios, gas species, r.f. substrate bias voltage (power) and substrate temperature. Etching was found to create a thin damage region near the surface modeled ellipsometrically as crystalline-plus-amorphous semiconductor in a Bruggeman effective-medium mixture.

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry

Abstract

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