Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry

Suraiya Nafis, Natale J. Ianno, Paul G. Snyder, William A. McGahan, Blaine Johs, John A Woollam

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The motivation for this work was to develop in-situ monitoring and control of electron cyclotron resonance (ECR) as an anisotropic etch doing minimal surface damage to electronic materials. We have used a modular rotating- analyzer spectroscopic ellipsometer in both the in-situ and ex-situ modes to investigate etching of Si, SiO2, GaAs and InP, as well as GaAs/Al1-xGaxAs/GaAs and InP/In1-xGaxAs heterostructures. Etching was done using a 175 W ECR source with mixtures of CCl2F2 and either oxygen or insert gases in various flow ratios in order to prevent polymerization. The experimental variables in these experiments were the gas ratios, gas species, r.f. substrate bias voltage (power) and substrate temperature. Etching was found to create a thin damage region near the surface modeled ellipsometrically as crystalline-plus-amorphous semiconductor in a Bruggeman effective-medium mixture.

Original languageEnglish (US)
Pages (from-to)253-255
Number of pages3
JournalThin Solid Films
Volume233
Issue number1-2
DOIs
StatePublished - Oct 12 1993

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry'. Together they form a unique fingerprint.

  • Cite this