Electron effective mass and phonon modes in GaAs incorporating boron and indium

T. Hofmann, M. Schubert, G. Leibiger, V. Gottschalch

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23 Scopus citations


The strain-free boron- and indium-containing GaAs compounds are promising candidates for III-V semiconductor solar cell absorber materials with lattice match to GaAs, for which experimental data of the electronic band structure are widely unknown. For nondegenerate, silicon-doped, n -type B0.03 In0.06 Ga0.91 As with band-gap energy of 1.36 eV, determined by near-infrared ellipsometry, a strong increase of the electron effective mass of 44% in B0.03 In0.06 Ga0.91 As compared to In0.06 Ga0.94 As is obtained from far-infrared magneto-optic generalized ellipsometry studies. The authors thereby obtain the vibrational lattice mode behavior. For BAs, an experimentally obscure compound, the curvature of the -point conduction band thus extrapolates to the free electron mass.

Original languageEnglish (US)
Article number182110
JournalApplied Physics Letters
Issue number18
StatePublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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