Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

S. Schöche; P. Kühne; T. Hofmann; M. Schubert; D. Nilsson; A. Kakanakova-Georgieva; E. Janzén; V. Darakchieva

doi:10.1063/1.4833195

Electron effective mass in Al_0.72Ga_0.28N alloys determined by mid-infrared optical Hall effect

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, V. Darakchieva

Electrical & Computer Engineering

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Abstract

The effective electron mass parameter in Si-doped Al_0.72Ga _0.28N is determined to be m = (0.336 ± 0.020) m 0 from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m = 0.232 m 0 for GaN, an average effective electron mass of m = 0.376 m 0 can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E₁(TO) and one phonon mode behavior of the A ₁(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

Original language	English (US)
Article number	212107
Journal	Applied Physics Letters
Volume	103
Issue number	21
DOIs	https://doi.org/10.1063/1.4833195
State	Published - Nov 18 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{a24b21d7cce04b98a9ba2f548a682d84,

title = "Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect",

abstract = "The effective electron mass parameter in Si-doped Al0.72Ga 0.28N is determined to be m = (0.336 ± 0.020) m 0 from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m = 0.232 m 0 for GaN, an average effective electron mass of m = 0.376 m 0 can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E1(TO) and one phonon mode behavior of the A 1(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.",

author = "S. Sch{\"o}che and P. K{\"u}hne and T. Hofmann and M. Schubert and D. Nilsson and A. Kakanakova-Georgieva and E. Janz{\'e}n and V. Darakchieva",

note = "Funding Information: The authors acknowledge financial support from the National Science Foundation under awards MRSEC DMR-0820521, MRI DMR-0922937, DMR-0907475, and EPS-1004094, by the Swedish Research Council (VR) under Grant No. 2010-3848, and the Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER International Qualification program, Grant No. 2011-03486. A.K.G. acknowledges support from the Link{\"o}ping Linnaeus Initiative for Novel Functionalized Materials (VR) and VINNOVA.",

year = "2013",

month = nov,

day = "18",

doi = "10.1063/1.4833195",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

AU - Schöche, S.

AU - Kühne, P.

AU - Hofmann, T.

AU - Schubert, M.

AU - Nilsson, D.

AU - Kakanakova-Georgieva, A.

AU - Janzén, E.

AU - Darakchieva, V.

N1 - Funding Information: The authors acknowledge financial support from the National Science Foundation under awards MRSEC DMR-0820521, MRI DMR-0922937, DMR-0907475, and EPS-1004094, by the Swedish Research Council (VR) under Grant No. 2010-3848, and the Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER International Qualification program, Grant No. 2011-03486. A.K.G. acknowledges support from the Linköping Linnaeus Initiative for Novel Functionalized Materials (VR) and VINNOVA.

PY - 2013/11/18

Y1 - 2013/11/18

N2 - The effective electron mass parameter in Si-doped Al0.72Ga 0.28N is determined to be m = (0.336 ± 0.020) m 0 from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m = 0.232 m 0 for GaN, an average effective electron mass of m = 0.376 m 0 can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E1(TO) and one phonon mode behavior of the A 1(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

AB - The effective electron mass parameter in Si-doped Al0.72Ga 0.28N is determined to be m = (0.336 ± 0.020) m 0 from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m = 0.232 m 0 for GaN, an average effective electron mass of m = 0.376 m 0 can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E1(TO) and one phonon mode behavior of the A 1(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

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JF - Applied Physics Letters

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Electron effective mass in Al_0.72Ga_0.28N alloys determined by mid-infrared optical Hall effect

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