TY - JOUR
T1 - Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect
AU - Armakavicius, Nerijus
AU - Stanishev, Vallery
AU - Knight, Sean
AU - Kühne, Philipp
AU - Schubert, Mathias
AU - Darakchieva, Vanya
N1 - Funding Information:
This work was supported by the Swedish Research Council (VR) under Grant No. 2016-00889, the Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program, Grant No. 2011-03486, the Competence Center Program Grant No. 2016-05190, the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University, Faculty Grant SFO Mat LiU No. 2009-00971, and the Swedish Foundation for Strategic Research (SSF), under Grant Nos. FL12-0181, RIF14-055, and EM16-0024. The authors further acknowledge financial support from the University of Nebraska-Lincoln, the J. A. Woollam Co., Inc., the J. A. Woollam Foundation, and the National Science Foundation (Award Nos. MRSEC DMR 1420645, CMMI 1337856, and EAR 1521428).
Funding Information:
This work was supported by the Swedish Research Council (VR) under Grant No. 2016-00889, the Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program, Grant No. 2011-03486, the Competence Center Program Grant No. 2016-05190, the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University, Faculty Grant SFO Mat LiU No. 2009-00971, and the Swedish Foundation for Strategic Research (SSF), under Grant Nos. FL12-0181, RIF14-055, and EM16-0024. The authors further acknowledge financial support from the University of Nebraska-Lincoln, the J. A. Woollam Co., Inc., the J. A. Woollam Foundation, and the National Science Foundation (Award Nos. MRSEC DMR 1420645, CMMI 1337856, and EAR 1521428). The authors thank Dr. Mengyao Xie and Professor Dr. Enrique Calleja (Universidad Politécnica de Madrid) for providing the In0.33Ga0.67N sample and Laurent Souqui (Linkoping University) for assistance with XRD measurements.
Publisher Copyright:
© 2018 Author(s).
PY - 2018/2/19
Y1 - 2018/2/19
N2 - Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure c-plane oriented In0.33Ga0.67N epitaxial layer. Room temperature electron effective mass parameters of m⊥∗=(0.205±0.013) m0 and m∥∗=(0.204±0.016) m0 for polarization perpendicular and parallel to the c-axis, respectively, were determined. The free electron concentration was obtained as (1.7 ± 0.2) × 1019 cm-3. Within our uncertainty limits, we detect no anisotropy for the electron effective mass parameter and we estimate the upper limit of the possible effective mass anisotropy as 7%. We discuss the influence of conduction band nonparabolicity on the electron effective mass parameter as a function of In content. The effective mass parameter is consistent with a linear interpolation scheme between the conduction band mass parameters in GaN and InN when the strong nonparabolicity in InN is included. The In0.33Ga0.67N electron mobility parameter was found to be anisotropic, supporting previous experimental findings for wurtzite-structure GaN, InN, and AlxGa1-xN epitaxial layers with c-plane growth orientation.
AB - Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure c-plane oriented In0.33Ga0.67N epitaxial layer. Room temperature electron effective mass parameters of m⊥∗=(0.205±0.013) m0 and m∥∗=(0.204±0.016) m0 for polarization perpendicular and parallel to the c-axis, respectively, were determined. The free electron concentration was obtained as (1.7 ± 0.2) × 1019 cm-3. Within our uncertainty limits, we detect no anisotropy for the electron effective mass parameter and we estimate the upper limit of the possible effective mass anisotropy as 7%. We discuss the influence of conduction band nonparabolicity on the electron effective mass parameter as a function of In content. The effective mass parameter is consistent with a linear interpolation scheme between the conduction band mass parameters in GaN and InN when the strong nonparabolicity in InN is included. The In0.33Ga0.67N electron mobility parameter was found to be anisotropic, supporting previous experimental findings for wurtzite-structure GaN, InN, and AlxGa1-xN epitaxial layers with c-plane growth orientation.
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U2 - 10.1063/1.5018247
DO - 10.1063/1.5018247
M3 - Article
AN - SCOPUS:85042467156
SN - 0003-6951
VL - 112
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
M1 - 082103
ER -