Electronic properties and phase transitions in the Mo-chain compound Mo2S3

M. H. Rashid; D. J. Sellmyer; V. Katkanant; R. D. Kirby

doi:10.1016/0038-1098(82)90769-4

Electronic properties and phase transitions in the Mo-chain compound Mo₂S₃

M. H. Rashid, D. J. Sellmyer, V. Katkanant, R. D. Kirby

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The results of electrical resistivity, magnetic susceptibility, and Raman scattering measurements on the Mo-chain compound Mo₂S₃ are presented. Phase transitions are observed in this material at temperatures of 182 K and 145 K on cooling from room temperature. These transitions show considerable hysteresis, occuring at 198 K and 180 K, respectively, on warming from low temperatures. A third phase transition is indicated by a large peak in the resistivity at 80 K.

Original language	English (US)
Pages (from-to)	675-678
Number of pages	4
Journal	Solid State Communications
Volume	43
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(82)90769-4
State	Published - Sep 1982

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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@article{1d24fe964a134cb990a099676f168f90,

title = "Electronic properties and phase transitions in the Mo-chain compound Mo2S3",

abstract = "The results of electrical resistivity, magnetic susceptibility, and Raman scattering measurements on the Mo-chain compound Mo2S3 are presented. Phase transitions are observed in this material at temperatures of 182 K and 145 K on cooling from room temperature. These transitions show considerable hysteresis, occuring at 198 K and 180 K, respectively, on warming from low temperatures. A third phase transition is indicated by a large peak in the resistivity at 80 K.",

author = "Rashid, {M. H.} and Sellmyer, {D. J.} and V. Katkanant and Kirby, {R. D.}",

note = "Funding Information: Acknowledgements --We wish to thank Professor James Carr for carrying out the chemical analysis of the Mo2S3 single crystals, Dr. David Hincks for helpful conversations on the structure, and R. Fagerquist for growing some of the crystals. This research was supported by the National Science Foundation under grants DMR-8110520 and DMR-7910025.",

year = "1982",

month = sep,

doi = "10.1016/0038-1098(82)90769-4",

language = "English (US)",

volume = "43",

pages = "675--678",

journal = "Solid State Communications",

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number = "9",

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TY - JOUR

T1 - Electronic properties and phase transitions in the Mo-chain compound Mo2S3

AU - Rashid, M. H.

AU - Sellmyer, D. J.

AU - Katkanant, V.

AU - Kirby, R. D.

N1 - Funding Information: Acknowledgements --We wish to thank Professor James Carr for carrying out the chemical analysis of the Mo2S3 single crystals, Dr. David Hincks for helpful conversations on the structure, and R. Fagerquist for growing some of the crystals. This research was supported by the National Science Foundation under grants DMR-8110520 and DMR-7910025.

PY - 1982/9

Y1 - 1982/9

N2 - The results of electrical resistivity, magnetic susceptibility, and Raman scattering measurements on the Mo-chain compound Mo2S3 are presented. Phase transitions are observed in this material at temperatures of 182 K and 145 K on cooling from room temperature. These transitions show considerable hysteresis, occuring at 198 K and 180 K, respectively, on warming from low temperatures. A third phase transition is indicated by a large peak in the resistivity at 80 K.

AB - The results of electrical resistivity, magnetic susceptibility, and Raman scattering measurements on the Mo-chain compound Mo2S3 are presented. Phase transitions are observed in this material at temperatures of 182 K and 145 K on cooling from room temperature. These transitions show considerable hysteresis, occuring at 198 K and 180 K, respectively, on warming from low temperatures. A third phase transition is indicated by a large peak in the resistivity at 80 K.

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U2 - 10.1016/0038-1098(82)90769-4

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EP - 678

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

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