Electronic properties of Bi2Se3 crystals

G. R. Hyde; H. A. Beale; I. L. Spain; J. A. Woollam

doi:10.1016/S0022-3697(74)80186-1

Electronic properties of Bi₂Se₃ crystals

G. R. Hyde, H. A. Beale, I. L. Spain, J. A. Woollam

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Bismuth selenide crystals were grown from melts with liquid concentrations within 0·2 per cent of stoichiometry. The resulting crystals were examined structurally showing that single crystal samples could be cut for electronic property measurements. Samples were n-type and degenerate (n ∼ 2 × 10²⁵ m^-3). Hall, magnetoresistance and Shubnikov-de Haas measurements confirm that the carriers lie in a single minimum located at the centre of the Brillouin Zone. The results are discussed in terms of a non-ellipsoidal band model, and the degeneracy discussed in terms of a defect model.

Original language	English (US)
Pages (from-to)	1719-1728
Number of pages	10
Journal	Journal of Physics and Chemistry of Solids
Volume	35
Issue number	12
DOIs	https://doi.org/10.1016/S0022-3697(74)80186-1
State	Published - 1974
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/S0022-3697(74)80186-1

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title = "Electronic properties of Bi2Se3 crystals",

abstract = "Bismuth selenide crystals were grown from melts with liquid concentrations within 0·2 per cent of stoichiometry. The resulting crystals were examined structurally showing that single crystal samples could be cut for electronic property measurements. Samples were n-type and degenerate (n ∼ 2 × 1025 m-3). Hall, magnetoresistance and Shubnikov-de Haas measurements confirm that the carriers lie in a single minimum located at the centre of the Brillouin Zone. The results are discussed in terms of a non-ellipsoidal band model, and the degeneracy discussed in terms of a defect model.",

author = "Hyde, {G. R.} and Beale, {H. A.} and Spain, {I. L.} and Woollam, {J. A.}",

note = "Funding Information: Acknowldegements--The authors wish to thank the Centre of Materials Research, University of Maryland, for a grant supporting this research. High field measurements were made at the NASA Lewis Research Center and at the National Magnet Laboratory, where the assistance of Prof. D. J. Sellmyer is greatfully acknowledged. The Crystal Growth Facility of the Centre of Materials Research, University of Maryland, was used for the growth of samples.",

year = "1974",

doi = "10.1016/S0022-3697(74)80186-1",

language = "English (US)",

volume = "35",

pages = "1719--1728",

journal = "Journal of Physics and Chemistry of Solids",

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TY - JOUR

T1 - Electronic properties of Bi2Se3 crystals

AU - Hyde, G. R.

AU - Beale, H. A.

AU - Spain, I. L.

AU - Woollam, J. A.

N1 - Funding Information: Acknowldegements--The authors wish to thank the Centre of Materials Research, University of Maryland, for a grant supporting this research. High field measurements were made at the NASA Lewis Research Center and at the National Magnet Laboratory, where the assistance of Prof. D. J. Sellmyer is greatfully acknowledged. The Crystal Growth Facility of the Centre of Materials Research, University of Maryland, was used for the growth of samples.

PY - 1974

Y1 - 1974

N2 - Bismuth selenide crystals were grown from melts with liquid concentrations within 0·2 per cent of stoichiometry. The resulting crystals were examined structurally showing that single crystal samples could be cut for electronic property measurements. Samples were n-type and degenerate (n ∼ 2 × 1025 m-3). Hall, magnetoresistance and Shubnikov-de Haas measurements confirm that the carriers lie in a single minimum located at the centre of the Brillouin Zone. The results are discussed in terms of a non-ellipsoidal band model, and the degeneracy discussed in terms of a defect model.

AB - Bismuth selenide crystals were grown from melts with liquid concentrations within 0·2 per cent of stoichiometry. The resulting crystals were examined structurally showing that single crystal samples could be cut for electronic property measurements. Samples were n-type and degenerate (n ∼ 2 × 1025 m-3). Hall, magnetoresistance and Shubnikov-de Haas measurements confirm that the carriers lie in a single minimum located at the centre of the Brillouin Zone. The results are discussed in terms of a non-ellipsoidal band model, and the degeneracy discussed in terms of a defect model.

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JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 12

ER -

Electronic properties of Bi₂Se₃ crystals

Abstract

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