Electronic properties of Bi2Se3 crystals

G. R. Hyde, H. A. Beale, I. L. Spain, J. A. Woollam

Research output: Contribution to journalArticle

46 Scopus citations

Abstract

Bismuth selenide crystals were grown from melts with liquid concentrations within 0·2 per cent of stoichiometry. The resulting crystals were examined structurally showing that single crystal samples could be cut for electronic property measurements. Samples were n-type and degenerate (n ∼ 2 × 1025 m-3). Hall, magnetoresistance and Shubnikov-de Haas measurements confirm that the carriers lie in a single minimum located at the centre of the Brillouin Zone. The results are discussed in terms of a non-ellipsoidal band model, and the degeneracy discussed in terms of a defect model.

Original languageEnglish (US)
Pages (from-to)1719-1728
Number of pages10
JournalJournal of Physics and Chemistry of Solids
Volume35
Issue number12
DOIs
StatePublished - 1974

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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