Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)

A. L. Ivanovskii; R. F. Sabiryanov; A. N. Skazkin; V. M. Zhukovskii; G. P. Shveikin

doi:10.1007/BF02758375

Electronic structure and bonding configuration of the H-phases Ti₂MC and Ti₂MN (M = Al, Ga, In)

A. L. Ivanovskii, R. F. Sabiryanov, A. N. Skazkin, V. M. Zhukovskii, G. P. Shveikin

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The electronic structure of the H-phases Ti₂MC and Ti₂MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.

Original language	English (US)
Pages (from-to)	28-31
Number of pages	4
Journal	Inorganic Materials
Volume	36
Issue number	1
DOIs	https://doi.org/10.1007/BF02758375
State	Published - 2000
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
Inorganic Chemistry
Metals and Alloys
Materials Chemistry

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title = "Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)",

abstract = "The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.",

author = "Ivanovskii, {A. L.} and Sabiryanov, {R. F.} and Skazkin, {A. N.} and Zhukovskii, {V. M.} and Shveikin, {G. P.}",

note = "Funding Information: This work was supported in part by the Russian Foundation for Basic Research, project no. 96-03-32037a.",

year = "2000",

doi = "10.1007/BF02758375",

language = "English (US)",

volume = "36",

pages = "28--31",

journal = "Inorganic Materials",

issn = "0020-1685",

publisher = "Pleiades Publishing",

number = "1",

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TY - JOUR

T1 - Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)

AU - Ivanovskii, A. L.

AU - Sabiryanov, R. F.

AU - Skazkin, A. N.

AU - Zhukovskii, V. M.

AU - Shveikin, G. P.

N1 - Funding Information: This work was supported in part by the Russian Foundation for Basic Research, project no. 96-03-32037a.

PY - 2000

Y1 - 2000

N2 - The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.

AB - The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.

UR - http://www.scopus.com/inward/record.url?scp=0033792086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033792086&partnerID=8YFLogxK

U2 - 10.1007/BF02758375

DO - 10.1007/BF02758375

M3 - Article

AN - SCOPUS:0033792086

SN - 0020-1685

VL - 36

SP - 28

EP - 31

JO - Inorganic Materials

JF - Inorganic Materials

IS - 1

ER -

Electronic structure and bonding configuration of the H-phases Ti₂MC and Ti₂MN (M = Al, Ga, In)

Abstract

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