TY - JOUR
T1 - Electronic transport in monolayer graphene nanoribbons produced by chemical unzipping of carbon nanotubes
AU - Sinitskii, Alexander
AU - Fursina, Alexandra A.
AU - Kosynkin, Dmitry V.
AU - Higginbotham, Amanda L.
AU - Natelson, Douglas
AU - Tour, James M.
N1 - Funding Information:
This work was supported by the Air Force Research Laboratory through University Technology Corporation (Grant No. 09-S568-064-010-9), the Air Force Office of Scientific Research (Grant No. FA9550-09-1-0581), the Office of Naval Research through a MURI with the University of California, Berkeley (Grant No. 00006766), and the Army Research Office through an SBIR with PrivaTran LLC.
PY - 2009
Y1 - 2009
N2 - We report on the structural and electrical properties of graphene nanoribbons (GNRs) produced by the oxidative unzipping of carbon nanotubes. GNRs were reduced by hydrazine at 95 °C and further annealed in Ar/ H 2 at 900 °C; monolayer ribbons were selected for the fabrication of electronic devices. GNR devices on Si/ SiO2 substrates exhibit an ambipolar electric field effect typical for graphene. The conductivity of monolayer GNRs (∼35 S/cm) and mobility of charge carriers (0.5-3 cm 2 /V s) are less than the conductivity and mobility of pristine graphene, which could be explained by oxidative damage caused by the harsh H2 SO4 / KMnO4 used to make GNRs. The resistance of GNR devices increases by about three orders of magnitude upon cooling from 300 to 20 K. The resistance/temperature data is consistent with the variable range hopping mechanism, which, along with the microscopy data, suggests that the GNRs have a nonuniform structure.
AB - We report on the structural and electrical properties of graphene nanoribbons (GNRs) produced by the oxidative unzipping of carbon nanotubes. GNRs were reduced by hydrazine at 95 °C and further annealed in Ar/ H 2 at 900 °C; monolayer ribbons were selected for the fabrication of electronic devices. GNR devices on Si/ SiO2 substrates exhibit an ambipolar electric field effect typical for graphene. The conductivity of monolayer GNRs (∼35 S/cm) and mobility of charge carriers (0.5-3 cm 2 /V s) are less than the conductivity and mobility of pristine graphene, which could be explained by oxidative damage caused by the harsh H2 SO4 / KMnO4 used to make GNRs. The resistance of GNR devices increases by about three orders of magnitude upon cooling from 300 to 20 K. The resistance/temperature data is consistent with the variable range hopping mechanism, which, along with the microscopy data, suggests that the GNRs have a nonuniform structure.
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U2 - 10.1063/1.3276912
DO - 10.1063/1.3276912
M3 - Article
AN - SCOPUS:73449108380
SN - 0003-6951
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 25
M1 - 253108
ER -