Abstract
We report on electrooptic reflection-type spectroscopic ellipsometry investigations of a wurtzite structure (ZnO) and perovskite structure (BaTiO3) thin film heterostructure between Pt contacts. The ZnO spontaneous polarization biases the ferroelectric polarization domain switching in BaTiO3, and causes a strong asymmetric electrooptic hysteresis behavior, reflected by an overall change of sample effective thickness and effective index of refraction. This hysteresis behavior is concordant with our previously observed electric hysteresis behavior of the same sample structure.We explain the hysteresis behavior by piezoelectric strain within the ferroelectric layer, by interface lattice charge coupling between the BaTiO 3 and ZnO layer, and the previously identified depletion layer formation within the n-type doped ZnO layer. (Graph Presented) Asymmetric hysteresis loop of piezoelectric effective thickness d change δd/d in a thin film Pt-ZnO[0001-textured]-BaTiO3(111-textured)-Pt heterostructure.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1328-1331 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2008 |
| Event | 4th International Conference on Spectroscopic Ellipsometry, ICSE4 - Stockholm, Sweden Duration: Jun 11 2007 → Jun 15 2007 |
ASJC Scopus subject areas
- Condensed Matter Physics