Electropolymerization of poly(phenylene oxide) on graphene as a top-gate dielectric

Alexey Lipatov, Benjamin B. Wymore, Alexandra Fursina, Timothy H. Vo, Alexander Sinitskii, Jody G. Redepenning

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Site-directed electrochemical deposition of pinhole free, low-κ dielectric thin films on graphene is described for the first time. Specifically, we demonstrate the heterogeneous electrochemical polymerization of phenol to form thin (3-4 nm) layers of poly(phenylene oxide) (PPO) on monolayer graphene samples prepared by micromechanical exfoliation and chemical vapor deposition growth. We demonstrate the reliability of depositing PPO films simultaneously on a large number of devices, and selected individual graphene flakes/devices. The performance of top-gated field effect transistor devices described herein demonstrates the utility of electrodeposited PPO films as a top-gate dielectric.

Original languageEnglish (US)
Pages (from-to)157-165
Number of pages9
JournalChemistry of Materials
Volume27
Issue number1
DOIs
StatePublished - Jan 13 2015

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ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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