Electroresistance effect in MoS2-Hf0.5Zr0.5O2heterojunctions

P. Chaudhary, P. Buragohain, M. Kozodaev, S. Zarubin, V. Mikheev, A. Chouprik, A. Lipatov, A. Sinitskii, A. Zenkevich, A. Gruverman

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Abstract

Pairing two-dimensional semiconductors with ferroelectric films may allow for the development of hybrid electronic devices that would not only exhibit a combination of the functional properties of both material groups but would also reveal unusual characteristics emerging from coupling between these properties. Here, we report the observation of a considerable (up to 103 at 0.8 V read bias) polarization-mediated tunneling electroresistance (TER) effect in Hf0.5Zr0.5O2 (HZO) ferroelectric tunnel junctions (FTJs) employing MoS2 as one of the electrodes. It was found that for this type of hybrid FTJs, a change in resistance upon polarization reversal could be described by Fowler-Nordheim tunneling. The underlying mechanism for the enhanced TER effect is a polarization-mediated accumulation or depletion of the majority carriers at the MoS2/HZO interface, which results in a change in the effective barrier shape seen by the tunneling electrons. Given the compatibility of HfO2-family ferroelectrics with CMOS technology and a possibility of large scale growth and transfer of MoS2 films, our results provide a pathway for fabrication of high-density nonvolatile memory and data storage systems based on hybrid FTJs.

Original languageEnglish (US)
Article number083106
JournalApplied Physics Letters
Volume118
Issue number8
DOIs
StatePublished - Feb 22 2021

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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