Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth

J. D. Benson, A. B. Cornfeld, M. Martinka, J. H. Dinan, B. Johs, P. He, John A. Woollam

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

An in-situ spectroscopic ellipsometer has been installed on a molecular beam epitaxy system to improve control of HgCdTe molecular beam epitaxy. Using the spectroscopic ellipsometer, in-situ analysis of substrate preparation, surface cleanliness and substrate temperature were monitored. These results were correlated with in-situ reflection high energy electron diffraction and Auger spectroscopy. A real time spectroscopic ellipsometric model was developed which determined the substrate temperature as well as the overlayer thickness.

Original languageEnglish (US)
Pages (from-to)659-664
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 1
DOIs
StatePublished - May 1997
Externally publishedYes

Keywords

  • Molecular beam epitaxy
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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