Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth

J. D. Benson; A. B. Cornfeld; M. Martinka; J. H. Dinan; B. Johs; P. He; John A. Woollam

doi:10.1016/S0022-0248(96)01214-6

Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth

J. D. Benson, A. B. Cornfeld, M. Martinka, J. H. Dinan, B. Johs, P. He, John A. Woollam

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

An in-situ spectroscopic ellipsometer has been installed on a molecular beam epitaxy system to improve control of HgCdTe molecular beam epitaxy. Using the spectroscopic ellipsometer, in-situ analysis of substrate preparation, surface cleanliness and substrate temperature were monitored. These results were correlated with in-situ reflection high energy electron diffraction and Auger spectroscopy. A real time spectroscopic ellipsometric model was developed which determined the substrate temperature as well as the overlayer thickness.

Original language	English (US)
Pages (from-to)	659-664
Number of pages	6
Journal	Journal of Crystal Growth
Volume	175-176
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0022-0248(96)01214-6
State	Published - May 1997
Externally published	Yes

Keywords

Molecular beam epitaxy
Spectroscopic ellipsometry

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(96)01214-6

Cite this

@article{6a067b911f244f15a314cb4195784016,

title = "Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth",

abstract = "An in-situ spectroscopic ellipsometer has been installed on a molecular beam epitaxy system to improve control of HgCdTe molecular beam epitaxy. Using the spectroscopic ellipsometer, in-situ analysis of substrate preparation, surface cleanliness and substrate temperature were monitored. These results were correlated with in-situ reflection high energy electron diffraction and Auger spectroscopy. A real time spectroscopic ellipsometric model was developed which determined the substrate temperature as well as the overlayer thickness.",

keywords = "Molecular beam epitaxy, Spectroscopic ellipsometry",

author = "Benson, {J. D.} and Cornfeld, {A. B.} and M. Martinka and Dinan, {J. H.} and B. Johs and P. He and Woollam, {John A.}",

year = "1997",

month = may,

doi = "10.1016/S0022-0248(96)01214-6",

language = "English (US)",

volume = "175-176",

pages = "659--664",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "PART 1",

}

TY - JOUR

T1 - Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth

AU - Benson, J. D.

AU - Cornfeld, A. B.

AU - Martinka, M.

AU - Dinan, J. H.

AU - Johs, B.

AU - He, P.

AU - Woollam, John A.

PY - 1997/5

Y1 - 1997/5

N2 - An in-situ spectroscopic ellipsometer has been installed on a molecular beam epitaxy system to improve control of HgCdTe molecular beam epitaxy. Using the spectroscopic ellipsometer, in-situ analysis of substrate preparation, surface cleanliness and substrate temperature were monitored. These results were correlated with in-situ reflection high energy electron diffraction and Auger spectroscopy. A real time spectroscopic ellipsometric model was developed which determined the substrate temperature as well as the overlayer thickness.

AB - An in-situ spectroscopic ellipsometer has been installed on a molecular beam epitaxy system to improve control of HgCdTe molecular beam epitaxy. Using the spectroscopic ellipsometer, in-situ analysis of substrate preparation, surface cleanliness and substrate temperature were monitored. These results were correlated with in-situ reflection high energy electron diffraction and Auger spectroscopy. A real time spectroscopic ellipsometric model was developed which determined the substrate temperature as well as the overlayer thickness.

KW - Molecular beam epitaxy

KW - Spectroscopic ellipsometry

UR - http://www.scopus.com/inward/record.url?scp=18144452458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18144452458&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(96)01214-6

DO - 10.1016/S0022-0248(96)01214-6

M3 - Article

AN - SCOPUS:18144452458

SN - 0022-0248

VL - 175-176

SP - 659

EP - 664

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - PART 1

ER -

Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this