Variable angle of incidence spectroscopic ellipsometry, cross-sectional transmission electron microscopy, and Rutherford backscattering are used to measure heterojunction layer thicknesses in the same AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits. Two additional samples were implanted with 750-keV Ga ions to fluences of 5×1015 and 1016 cm -2, respectively, and results of diagnostics measurements by the three techniques compared. The three techniques are found to complement each other in providing useful information.
ASJC Scopus subject areas
- Physics and Astronomy(all)