Ellipsometric measurements of molecular-beam-epitaxy-grown semiconductor multilayer thicknesses: A comparative study

John A. Woollam, Paul G. Snyder, Anthony W. McCormick, A. K. Rai, David Ingram, Peter P. Pronko

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Variable angle of incidence spectroscopic ellipsometry, cross-sectional transmission electron microscopy, and Rutherford backscattering are used to measure heterojunction layer thicknesses in the same AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits. Two additional samples were implanted with 750-keV Ga ions to fluences of 5×1015 and 1016 cm -2, respectively, and results of diagnostics measurements by the three techniques compared. The three techniques are found to complement each other in providing useful information.

Original languageEnglish (US)
Pages (from-to)4867-4871
Number of pages5
JournalJournal of Applied Physics
Volume62
Issue number12
DOIs
StatePublished - 1987

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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