Abstract
Variable angle of incidence spectroscopic ellipsometry, cross-sectional transmission electron microscopy, and Rutherford backscattering are used to measure heterojunction layer thicknesses in the same AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits. Two additional samples were implanted with 750-keV Ga ions to fluences of 5×1015 and 1016 cm -2, respectively, and results of diagnostics measurements by the three techniques compared. The three techniques are found to complement each other in providing useful information.
Original language | English (US) |
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Pages (from-to) | 4867-4871 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 62 |
Issue number | 12 |
DOIs | |
State | Published - 1987 |
ASJC Scopus subject areas
- General Physics and Astronomy