Ellipsometric monitoring of defects induced by electron cyclotron resonance etching of GaAs

P. G. Snyder; N. J. Ianno; B. Wigert; S. Pittal; B. Johs; J. A. Woollam

doi:10.1557/proc-378-689

Ellipsometric monitoring of defects induced by electron cyclotron resonance etching of GaAs

P. G. Snyder, N. J. Ianno, B. Wigert, S. Pittal, B. Johs, J. A. Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Spectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24-5 eV, included the E₁, E₁+Δ₁ critical points. The E₁, E₁+Δ₁ structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H₂ plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1%, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.

Original language	English (US)
Pages (from-to)	689-694
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	378
DOIs	https://doi.org/10.1557/proc-378-689
State	Published - 1995
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 20 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-378-689

Cite this

@article{81c32072132649ea8d51a0eb93efbe31,

title = "Ellipsometric monitoring of defects induced by electron cyclotron resonance etching of GaAs",

abstract = "Spectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24-5 eV, included the E1, E1+Δ1 critical points. The E1, E1+Δ1 structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H2 plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1%, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.",

author = "Snyder, {P. G.} and Ianno, {N. J.} and B. Wigert and S. Pittal and B. Johs and Woollam, {J. A.}",

year = "1995",

doi = "10.1557/proc-378-689",

language = "English (US)",

volume = "378",

pages = "689--694",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Spring Meeting ; Conference date: 17-04-1995 Through 20-04-1995",

}

TY - JOUR

T1 - Ellipsometric monitoring of defects induced by electron cyclotron resonance etching of GaAs

AU - Snyder, P. G.

AU - Ianno, N. J.

AU - Wigert, B.

AU - Pittal, S.

AU - Johs, B.

AU - Woollam, J. A.

PY - 1995

Y1 - 1995

N2 - Spectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24-5 eV, included the E1, E1+Δ1 critical points. The E1, E1+Δ1 structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H2 plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1%, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.

AB - Spectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24-5 eV, included the E1, E1+Δ1 critical points. The E1, E1+Δ1 structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H2 plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1%, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.

UR - http://www.scopus.com/inward/record.url?scp=0029504479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029504479&partnerID=8YFLogxK

U2 - 10.1557/proc-378-689

DO - 10.1557/proc-378-689

M3 - Conference article

AN - SCOPUS:0029504479

SN - 0272-9172

VL - 378

SP - 689

EP - 694

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 17 April 1995 through 20 April 1995

ER -

Ellipsometric monitoring of defects induced by electron cyclotron resonance etching of GaAs

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this