Ellipsometric monitoring of defects induced by electron cyclotron resonance etching of GaAs

P. G. Snyder, N. J. Ianno, B. Wigert, S. Pittal, B. Johs, J. A. Woollam

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Spectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24-5 eV, included the E1, E11 critical points. The E1, E11 structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H2 plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1%, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.

Original languageEnglish (US)
Pages (from-to)689-694
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume378
StatePublished - Dec 1 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 20 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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