ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE.

SAMUEL A. ALTEROVITZ, GEORGE H.BU ABBUD, JOHN A. WOOLLAM, DAVID LIU, YEUNG CHUNG, DIETER LANGER

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A METHOD FOR OPTIMIZING THE SENSITIVITY OF ELLIPSOMETRIC MEASUREMENTS FOR THIN DIELECTRIC FILMS ON SEMICONDUCTORS IS DESCRIBED IN SIMPLE PHYSICAL TERMS. THE TECHNIQUE IS DEMONSTRATED FOR THE CASE OF SPUTTERED SILICON NITRIDE FILMS ON GALLIUM ARSENIDE IN NONDESTRUCTIVE MEASUREMENT OF FILM PROPERTIESBY ASSUMING ONE- OR TWO-LAYER MODELS.

Original languageEnglish (US)
Pages (from-to)163-177
Number of pages15
JournalAPPL PHYS COMMUN
VolumeV 1
Issue numberN 2
StatePublished - 1981

ASJC Scopus subject areas

  • Engineering(all)

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