ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE.

SAMUEL A. ALTEROVITZ; GEORGE H.BU ABBUD; JOHN A. WOOLLAM; DAVID LIU; YEUNG CHUNG; DIETER LANGER

ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE.

SAMUEL A. ALTEROVITZ, GEORGE H.BU ABBUD, JOHN A. WOOLLAM, DAVID LIU, YEUNG CHUNG, DIETER LANGER

Research output: Contribution to journal › Article › peer-review

Abstract

A METHOD FOR OPTIMIZING THE SENSITIVITY OF ELLIPSOMETRIC MEASUREMENTS FOR THIN DIELECTRIC FILMS ON SEMICONDUCTORS IS DESCRIBED IN SIMPLE PHYSICAL TERMS. THE TECHNIQUE IS DEMONSTRATED FOR THE CASE OF SPUTTERED SILICON NITRIDE FILMS ON GALLIUM ARSENIDE IN NONDESTRUCTIVE MEASUREMENT OF FILM PROPERTIESBY ASSUMING ONE- OR TWO-LAYER MODELS.

Original language	English (US)
Pages (from-to)	163-177
Number of pages	15
Journal	APPL PHYS COMMUN
Volume	V 1
Issue number	N 2
State	Published - 1981
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

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title = "ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE.",

abstract = "A METHOD FOR OPTIMIZING THE SENSITIVITY OF ELLIPSOMETRIC MEASUREMENTS FOR THIN DIELECTRIC FILMS ON SEMICONDUCTORS IS DESCRIBED IN SIMPLE PHYSICAL TERMS. THE TECHNIQUE IS DEMONSTRATED FOR THE CASE OF SPUTTERED SILICON NITRIDE FILMS ON GALLIUM ARSENIDE IN NONDESTRUCTIVE MEASUREMENT OF FILM PROPERTIESBY ASSUMING ONE- OR TWO-LAYER MODELS.",

author = "ALTEROVITZ, {SAMUEL A.} and ABBUD, {GEORGE H.BU} and WOOLLAM, {JOHN A.} and DAVID LIU and YEUNG CHUNG and DIETER LANGER",

year = "1981",

language = "English (US)",

volume = "V 1",

pages = "163--177",

journal = "Applied physics communications",

issn = "0277-9374",

number = "N 2",

}

TY - JOUR

T1 - ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE.

AU - ALTEROVITZ, SAMUEL A.

AU - ABBUD, GEORGE H.BU

AU - WOOLLAM, JOHN A.

AU - LIU, DAVID

AU - CHUNG, YEUNG

AU - LANGER, DIETER

PY - 1981

Y1 - 1981

N2 - A METHOD FOR OPTIMIZING THE SENSITIVITY OF ELLIPSOMETRIC MEASUREMENTS FOR THIN DIELECTRIC FILMS ON SEMICONDUCTORS IS DESCRIBED IN SIMPLE PHYSICAL TERMS. THE TECHNIQUE IS DEMONSTRATED FOR THE CASE OF SPUTTERED SILICON NITRIDE FILMS ON GALLIUM ARSENIDE IN NONDESTRUCTIVE MEASUREMENT OF FILM PROPERTIESBY ASSUMING ONE- OR TWO-LAYER MODELS.

AB - A METHOD FOR OPTIMIZING THE SENSITIVITY OF ELLIPSOMETRIC MEASUREMENTS FOR THIN DIELECTRIC FILMS ON SEMICONDUCTORS IS DESCRIBED IN SIMPLE PHYSICAL TERMS. THE TECHNIQUE IS DEMONSTRATED FOR THE CASE OF SPUTTERED SILICON NITRIDE FILMS ON GALLIUM ARSENIDE IN NONDESTRUCTIVE MEASUREMENT OF FILM PROPERTIESBY ASSUMING ONE- OR TWO-LAYER MODELS.

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UR - http://www.scopus.com/inward/citedby.url?scp=0019738748&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0019738748

SN - 0277-9374

VL - V 1

SP - 163

EP - 177

JO - Applied physics communications

JF - Applied physics communications

IS - N 2

ER -

ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE.

Abstract

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