Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Philipp Kühne, Nerijus Armakavicius, Alexis Papamichail, Dat Q. Tran, Vallery Stanishev, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva

Research output: Contribution to journal › Article › peer-review

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