Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Philipp Kühne, Nerijus Armakavicius, Alexis Papamichail, Dat Q. Tran, Vallery Stanishev, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva

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Physics & Astronomy