Abstract
Cr-doped AlN thin films were epitaxially grown on Al2O 3(001) substrates at low temperature by reactive magnetron sputtering, and their magnetic properties were investigated. Extensive x-ray diffraction studies indicated that the films have a wurtzite-type hexagonal structure and are (001) oriented, with an epitaxial relationship of the [100] direction of the films along the [110] direction of Al2O 3. The c axis lattice parameter of the films showed a linear dependence on the Cr concentration for Cr concentrations below 0.15. Room temperature ferromagnetism was observed, and the magnetic properties showed strong dependence on the Cr concentration over a wide range.
Original language | English (US) |
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Pages (from-to) | 3137-3142 |
Number of pages | 6 |
Journal | Journal of Physics Condensed Matter |
Volume | 17 |
Issue number | 21 |
DOIs | |
State | Published - Jun 1 2005 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics