Er-implanted porous silicon: a novel material for Si-based infrared LEDs

Fereydoon Namavar, F. Lu, C. H. Perry, A. Cremins, N. M. Kalkhoran, J. T. Daly, R. A. Soref

Research output: Contribution to journalConference article

22 Scopus citations

Abstract

A strong, room-temperature, 1.54 μm emission from erbium-implanted at 190 keV into red-emitting porous silicon is demonstrated. Luminescence data showed that the intensity of infrared (IR) emission from Er implanted porous Si annealed at ≤ 650 °C, was a few orders of magnitude stronger than Er implanted quartz produced under identical conditions, and was almost comparable to IR emission from In0.53Ga0.47. As material which is used for commercial light-emitting diodes.

Original languageEnglish (US)
Pages (from-to)375-380
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume358
StatePublished - 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Nov 30 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Namavar, F., Lu, F., Perry, C. H., Cremins, A., Kalkhoran, N. M., Daly, J. T., & Soref, R. A. (1995). Er-implanted porous silicon: a novel material for Si-based infrared LEDs. Materials Research Society Symposium - Proceedings, 358, 375-380.