Er-implanted porous silicon: a novel material for Si-based infrared LEDs

Fereydoon Namavar; F. Lu; C. H. Perry; A. Cremins; N. M. Kalkhoran; J. T. Daly; R. A. Soref

Er-implanted porous silicon: a novel material for Si-based infrared LEDs

Fereydoon Namavar, F. Lu, C. H. Perry, A. Cremins, N. M. Kalkhoran, J. T. Daly, R. A. Soref

Orthopaedic Surgery & Rehabilitation

Research output: Contribution to journal › Conference article › peer-review

22 Scopus citations

Abstract

A strong, room-temperature, 1.54 μm emission from erbium-implanted at 190 keV into red-emitting porous silicon is demonstrated. Luminescence data showed that the intensity of infrared (IR) emission from Er implanted porous Si annealed at ≤ 650 °C, was a few orders of magnitude stronger than Er implanted quartz produced under identical conditions, and was almost comparable to IR emission from In_0.53Ga_0.47. As material which is used for commercial light-emitting diodes.

Original language	English (US)
Pages (from-to)	375-380
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	358
State	Published - 1995
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Nov 30 1994

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{92a1575af7e44401940663db4107d34a,

title = "Er-implanted porous silicon: a novel material for Si-based infrared LEDs",

abstract = "A strong, room-temperature, 1.54 μm emission from erbium-implanted at 190 keV into red-emitting porous silicon is demonstrated. Luminescence data showed that the intensity of infrared (IR) emission from Er implanted porous Si annealed at ≤ 650 °C, was a few orders of magnitude stronger than Er implanted quartz produced under identical conditions, and was almost comparable to IR emission from In0.53Ga0.47. As material which is used for commercial light-emitting diodes.",

author = "Fereydoon Namavar and F. Lu and Perry, {C. H.} and A. Cremins and Kalkhoran, {N. M.} and Daly, {J. T.} and Soref, {R. A.}",

year = "1995",

language = "English (US)",

volume = "358",

pages = "375--380",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 30-11-1994",

}

TY - JOUR

T1 - Er-implanted porous silicon

T2 - Proceedings of the 1994 MRS Fall Meeting

AU - Namavar, Fereydoon

AU - Lu, F.

AU - Perry, C. H.

AU - Cremins, A.

AU - Kalkhoran, N. M.

AU - Daly, J. T.

AU - Soref, R. A.

PY - 1995

Y1 - 1995

N2 - A strong, room-temperature, 1.54 μm emission from erbium-implanted at 190 keV into red-emitting porous silicon is demonstrated. Luminescence data showed that the intensity of infrared (IR) emission from Er implanted porous Si annealed at ≤ 650 °C, was a few orders of magnitude stronger than Er implanted quartz produced under identical conditions, and was almost comparable to IR emission from In0.53Ga0.47. As material which is used for commercial light-emitting diodes.

AB - A strong, room-temperature, 1.54 μm emission from erbium-implanted at 190 keV into red-emitting porous silicon is demonstrated. Luminescence data showed that the intensity of infrared (IR) emission from Er implanted porous Si annealed at ≤ 650 °C, was a few orders of magnitude stronger than Er implanted quartz produced under identical conditions, and was almost comparable to IR emission from In0.53Ga0.47. As material which is used for commercial light-emitting diodes.

UR - http://www.scopus.com/inward/record.url?scp=0029222951&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029222951&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029222951

SN - 0272-9172

VL - 358

SP - 375

EP - 380

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 28 November 1994 through 30 November 1994

ER -

Er-implanted porous silicon: a novel material for Si-based infrared LEDs

Abstract

ASJC Scopus subject areas

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