Erratum: Strain induced half-metal to semiconductor transition in GdN (Physical Review Letters (2005) 94 (237201))

Chun Gang Duan; R. F. Sabiryanov; Jianjun Liu; W. N. Mei; P. A. Dowben; J. R. Hardy

doi:10.1103/PhysRevLett.96.139901

Erratum: Strain induced half-metal to semiconductor transition in GdN (Physical Review Letters (2005) 94 (237201))

Chun Gang Duan, R. F. Sabiryanov, Jianjun Liu, W. N. Mei, P. A. Dowben, J. R. Hardy

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Article number	139901
Journal	Physical Review Letters
Volume	96
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.96.139901
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.96.139901

Cite this

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title = "Erratum: Strain induced half-metal to semiconductor transition in GdN (Physical Review Letters (2005) 94 (237201))",

author = "Duan, {Chun Gang} and Sabiryanov, {R. F.} and Jianjun Liu and Mei, {W. N.} and Dowben, {P. A.} and Hardy, {J. R.}",

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language = "English (US)",

volume = "96",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

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AU - Dowben, P. A.

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Erratum: Strain induced half-metal to semiconductor transition in GdN (Physical Review Letters (2005) 94 (237201))

ASJC Scopus subject areas

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