Erratum: Strain induced half-metal to semiconductor transition in GdN (Physical Review Letters (2005) 94 (237201))

Chun Gang Duan; R. F. Sabiryanov; Jianjun Liu; W. N. Mei; P. A. Dowben; J. R. Hardy

doi:10.1103/PhysRevLett.96.139901

Erratum: Strain induced half-metal to semiconductor transition in GdN (Physical Review Letters (2005) 94 (237201))

Chun Gang Duan, R. F. Sabiryanov, Jianjun Liu, W. N. Mei, P. A. Dowben, J. R. Hardy

Physics

Research output: Contribution to journal › Comment/debate

3 Scopus citations

Original language	English (US)
Article number	139901
Journal	Physical Review Letters
Volume	96
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.96.139901
State	Published - Apr 14 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Duan, C. G., Sabiryanov, R. F., Liu, J., Mei, W. N., Dowben, P. A., & Hardy, J. R. (2006). Erratum: Strain induced half-metal to semiconductor transition in GdN (Physical Review Letters (2005) 94 (237201)). Physical Review Letters, 96(13), [139901]. https://doi.org/10.1103/PhysRevLett.96.139901

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Access to Document

10.1103/PhysRevLett.96.139901