Erratum: Surface termination and Schottky-barrier formation of In4Se3(001) (Semiconductor Science and Technology (2020) 35 (065009) DOI: 10.1088/1361-6641/ab7e45)

Archit Dhingra; Pavlo V. Galiy; Lu Wang; Nataliia S. Vorobeva; Alexey Lipatov; Angel Torres; Taras M. Nenchuk; Simeon J. Gilbert; Alexander Sinitskii; Andrew J. Yost; Wai Ning Mei; Keisuke Fukutani; Jia Shiang Chen; Peter A. Dowben

doi:10.1088/1361-6641/abf9e7

Erratum: Surface termination and Schottky-barrier formation of In₄Se₃(001) (Semiconductor Science and Technology (2020) 35 (065009) DOI: 10.1088/1361-6641/ab7e45)

Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter A. Dowben

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

Through the description of various surface terminations, the chain direction of In4Se3 in this paper [1] is implied to be in the plane of its surface. Even though the common convention for photoemission spectroscopy is to place z-axis along the surface normal, the axis perpendicular to the growth direction for this indium selenide is the crystallographic a-axis (and not the c-axis) [2–4]. Therefore, in our work the surface of In4Se3 should have been labeled (100), and not (001), to prevent any confusion that may have resulted from a less than conventional index notation. Data availability statement The data that support the findings of this study are available upon reasonable request from the authors.

Original language	English (US)
Article number	069501
Journal	Semiconductor Science and Technology
Volume	36
Issue number	6
DOIs	https://doi.org/10.1088/1361-6641/abf9e7
State	Published - Jun 2021

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Dhingra, A., Galiy, P. V., Wang, L., Vorobeva, N. S., Lipatov, A., Torres, A., Nenchuk, T. M., Gilbert, S. J., Sinitskii, A., Yost, A. J., Mei, W. N., Fukutani, K., Chen, J. S., & Dowben, P. A. (2021). Erratum: Surface termination and Schottky-barrier formation of In₄Se₃(001) (Semiconductor Science and Technology (2020) 35 (065009) DOI: 10.1088/1361-6641/ab7e45). Semiconductor Science and Technology, 36(6), Article 069501. https://doi.org/10.1088/1361-6641/abf9e7

Dhingra, A, Galiy, PV, Wang, L, Vorobeva, NS, Lipatov, A, Torres, A, Nenchuk, TM, Gilbert, SJ, Sinitskii, A, Yost, AJ, Mei, WN, Fukutani, K, Chen, JS & Dowben, PA 2021, 'Erratum: Surface termination and Schottky-barrier formation of In₄Se₃(001) (Semiconductor Science and Technology (2020) 35 (065009) DOI: 10.1088/1361-6641/ab7e45)', Semiconductor Science and Technology, vol. 36, no. 6, 069501. https://doi.org/10.1088/1361-6641/abf9e7

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abstract = "Through the description of various surface terminations, the chain direction of In4Se3 in this paper [1] is implied to be in the plane of its surface. Even though the common convention for photoemission spectroscopy is to place z-axis along the surface normal, the axis perpendicular to the growth direction for this indium selenide is the crystallographic a-axis (and not the c-axis) [2–4]. Therefore, in our work the surface of In4Se3 should have been labeled (100), and not (001), to prevent any confusion that may have resulted from a less than conventional index notation. Data availability statement The data that support the findings of this study are available upon reasonable request from the authors.",

author = "Archit Dhingra and Galiy, {Pavlo V.} and Lu Wang and Vorobeva, {Nataliia S.} and Alexey Lipatov and Angel Torres and Nenchuk, {Taras M.} and Gilbert, {Simeon J.} and Alexander Sinitskii and Yost, {Andrew J.} and Mei, {Wai Ning} and Keisuke Fukutani and Chen, {Jia Shiang} and Dowben, {Peter A.}",

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AU - Dhingra, Archit

AU - Galiy, Pavlo V.

AU - Wang, Lu

AU - Vorobeva, Nataliia S.

AU - Lipatov, Alexey

AU - Torres, Angel

AU - Nenchuk, Taras M.

AU - Gilbert, Simeon J.

AU - Sinitskii, Alexander

AU - Yost, Andrew J.

AU - Mei, Wai Ning

AU - Fukutani, Keisuke

AU - Chen, Jia Shiang

AU - Dowben, Peter A.

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AB - Through the description of various surface terminations, the chain direction of In4Se3 in this paper [1] is implied to be in the plane of its surface. Even though the common convention for photoemission spectroscopy is to place z-axis along the surface normal, the axis perpendicular to the growth direction for this indium selenide is the crystallographic a-axis (and not the c-axis) [2–4]. Therefore, in our work the surface of In4Se3 should have been labeled (100), and not (001), to prevent any confusion that may have resulted from a less than conventional index notation. Data availability statement The data that support the findings of this study are available upon reasonable request from the authors.

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Erratum: Surface termination and Schottky-barrier formation of In₄Se₃(001) (Semiconductor Science and Technology (2020) 35 (065009) DOI: 10.1088/1361-6641/ab7e45)

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