Erratum: Surface termination and Schottky-barrier formation of In4Se3(001) (Semiconductor Science and Technology (2020) 35 (065009) DOI: 10.1088/1361-6641/ab7e45)

Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter A. Dowben

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