Etching Rate Control by MeV O+Implantation for Laser-Chemical Reaction of Ferrite

Yong Feng Lu, Mikio Takai, Akiyoshi Chayahara, Mamoru Satou, Susumu Namba, Hiroyuki Sanda, Syohei Nagatomo

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The control of etching rate in laser-induced chemical reaction of Mn-Zn ferrite in H3PO4solution by MeV O+implantation has been investigated. The etching induced by Ar+-ion laser irradiation in a H3PO4solution was suppressed by implantating 3 MeV O+to a dose of 1×1017cm-2when the laser power was low. The etching suppression disappeared when the O+-implanted sample was thermally annealed at 850°C for 30 min. The suppression is found to be related to the crystallinity change induced by ion implantation instead of surface reflectivity change.

Original languageEnglish (US)
Pages (from-to)2260-2264
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number10
StatePublished - Oct 1990
Externally publishedYes


  • Etching suppression
  • Ion implantation
  • Laser etching
  • Lattice disorder
  • Mn-Zn ferrite

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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