Etching Rate Control by MeV O+Implantation for Laser-Chemical Reaction of Ferrite

Yong Feng Lu; Mikio Takai; Akiyoshi Chayahara; Mamoru Satou; Susumu Namba; Hiroyuki Sanda; Syohei Nagatomo

doi:10.1143/JJAP.29.2260

Etching Rate Control by MeV O₊Implantation for Laser-Chemical Reaction of Ferrite

Yong Feng Lu, Mikio Takai, Akiyoshi Chayahara, Mamoru Satou, Susumu Namba, Hiroyuki Sanda, Syohei Nagatomo

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The control of etching rate in laser-induced chemical reaction of Mn-Zn ferrite in H₃PO₄solution by MeV O₊implantation has been investigated. The etching induced by Ar₊-ion laser irradiation in a H₃PO₄solution was suppressed by implantating 3 MeV O₊to a dose of 1×10₁₇cm_-2when the laser power was low. The etching suppression disappeared when the O₊-implanted sample was thermally annealed at 850°C for 30 min. The suppression is found to be related to the crystallinity change induced by ion implantation instead of surface reflectivity change.

Original language	English (US)
Pages (from-to)	2260-2264
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	29
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.29.2260
State	Published - Oct 1990
Externally published	Yes

Keywords

Etching suppression
Ion implantation
Laser etching
Lattice disorder
Mn-Zn ferrite

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.29.2260

Cite this

@article{febfa125dbb9401ba46445c91024012d,

title = "Etching Rate Control by MeV O+Implantation for Laser-Chemical Reaction of Ferrite",

abstract = "The control of etching rate in laser-induced chemical reaction of Mn-Zn ferrite in H3PO4solution by MeV O+implantation has been investigated. The etching induced by Ar+-ion laser irradiation in a H3PO4solution was suppressed by implantating 3 MeV O+to a dose of 1×1017cm-2when the laser power was low. The etching suppression disappeared when the O+-implanted sample was thermally annealed at 850°C for 30 min. The suppression is found to be related to the crystallinity change induced by ion implantation instead of surface reflectivity change.",

keywords = "Etching suppression, Ion implantation, Laser etching, Lattice disorder, Mn-Zn ferrite",

author = "Lu, {Yong Feng} and Mikio Takai and Akiyoshi Chayahara and Mamoru Satou and Susumu Namba and Hiroyuki Sanda and Syohei Nagatomo",

year = "1990",

month = oct,

doi = "10.1143/JJAP.29.2260",

language = "English (US)",

volume = "29",

pages = "2260--2264",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Etching Rate Control by MeV O+Implantation for Laser-Chemical Reaction of Ferrite

AU - Lu, Yong Feng

AU - Takai, Mikio

AU - Chayahara, Akiyoshi

AU - Satou, Mamoru

AU - Namba, Susumu

AU - Sanda, Hiroyuki

AU - Nagatomo, Syohei

PY - 1990/10

Y1 - 1990/10

N2 - The control of etching rate in laser-induced chemical reaction of Mn-Zn ferrite in H3PO4solution by MeV O+implantation has been investigated. The etching induced by Ar+-ion laser irradiation in a H3PO4solution was suppressed by implantating 3 MeV O+to a dose of 1×1017cm-2when the laser power was low. The etching suppression disappeared when the O+-implanted sample was thermally annealed at 850°C for 30 min. The suppression is found to be related to the crystallinity change induced by ion implantation instead of surface reflectivity change.

AB - The control of etching rate in laser-induced chemical reaction of Mn-Zn ferrite in H3PO4solution by MeV O+implantation has been investigated. The etching induced by Ar+-ion laser irradiation in a H3PO4solution was suppressed by implantating 3 MeV O+to a dose of 1×1017cm-2when the laser power was low. The etching suppression disappeared when the O+-implanted sample was thermally annealed at 850°C for 30 min. The suppression is found to be related to the crystallinity change induced by ion implantation instead of surface reflectivity change.

KW - Etching suppression

KW - Ion implantation

KW - Laser etching

KW - Lattice disorder

KW - Mn-Zn ferrite

UR - http://www.scopus.com/inward/record.url?scp=5944226301&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5944226301&partnerID=8YFLogxK

U2 - 10.1143/JJAP.29.2260

DO - 10.1143/JJAP.29.2260

M3 - Article

AN - SCOPUS:5944226301

SN - 0021-4922

VL - 29

SP - 2260

EP - 2264

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10

ER -