TY - GEN
T1 - Ex-situ and in-situ selenization of copper-indium and copper-boron thin films
AU - Soukup, R. J.
AU - Ianno, N. J.
AU - Kamler, Chad
AU - Diaz, Martin
AU - Sharma, Shuchi
AU - Huguenin-Love, James
AU - Olejniček, Jiři
AU - Darveau, Scott A.
AU - Exstrom, Christopher L.
PY - 2008
Y1 - 2008
N2 - It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B 2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.
AB - It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B 2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.
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U2 - 10.1109/PVSC.2008.4922546
DO - 10.1109/PVSC.2008.4922546
M3 - Conference contribution
AN - SCOPUS:84879736663
SN - 9781424416417
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -