Ex-situ and in-situ selenization of copper-indium and copper-boron thin films

R. J. Soukup; N. J. Ianno; Chad Kamler; Martin Diaz; Shuchi Sharma; James Huguenin-Love; Jiři Olejniček; Scott A. Darveau; Christopher L. Exstrom

doi:10.1109/PVSC.2008.4922546

Ex-situ and in-situ selenization of copper-indium and copper-boron thin films

R. J. Soukup, N. J. Ianno, Chad Kamler, Martin Diaz, Shuchi Sharma, James Huguenin-Love, Jiři Olejniček, Scott A. Darveau, Christopher L. Exstrom

Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe₂ is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuIn_xB_1-xSe₂ (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu_.45In_.55; and a Cu₃B ₂ target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.

Original language	English (US)
Title of host publication	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs	https://doi.org/10.1109/PVSC.2008.4922546
State	Published - 2008
Event	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: May 11 2008 → May 16 2008

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country	United States
City	San Diego, CA
Period	5/11/08 → 5/16/08

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2008.4922546

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Soukup, R. J., Ianno, N. J., Kamler, C., Diaz, M., Sharma, S., Huguenin-Love, J., Olejniček, J., Darveau, S. A., & Exstrom, C. L. (2008). Ex-situ and in-situ selenization of copper-indium and copper-boron thin films. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 [4922546] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922546

Ex-situ and in-situ selenization of copper-indium and copper-boron thin films. / Soukup, R. J.; Ianno, N. J.; Kamler, Chad; Diaz, Martin; Sharma, Shuchi; Huguenin-Love, James; Olejniček, Jiři; Darveau, Scott A.; Exstrom, Christopher L.

33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922546 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Soukup, RJ, Ianno, NJ, Kamler, C, Diaz, M, Sharma, S, Huguenin-Love, J, Olejniček, J, Darveau, SA & Exstrom, CL 2008, Ex-situ and in-situ selenization of copper-indium and copper-boron thin films. in 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922546, Conference Record of the IEEE Photovoltaic Specialists Conference, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922546

Soukup, R. J. ; Ianno, N. J. ; Kamler, Chad ; Diaz, Martin ; Sharma, Shuchi ; Huguenin-Love, James ; Olejniček, Jiři ; Darveau, Scott A. ; Exstrom, Christopher L. / Ex-situ and in-situ selenization of copper-indium and copper-boron thin films. 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{ee89934f16794884ab17f385817583dc,

title = "Ex-situ and in-situ selenization of copper-indium and copper-boron thin films",

abstract = "It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B 2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.",

author = "Soukup, {R. J.} and Ianno, {N. J.} and Chad Kamler and Martin Diaz and Shuchi Sharma and James Huguenin-Love and Ji{\v r}i Olejni{\v c}ek and Darveau, {Scott A.} and Exstrom, {Christopher L.}",

year = "2008",

doi = "10.1109/PVSC.2008.4922546",

language = "English (US)",

isbn = "9781424416417",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

booktitle = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008",

}

TY - GEN

T1 - Ex-situ and in-situ selenization of copper-indium and copper-boron thin films

AU - Soukup, R. J.

AU - Ianno, N. J.

AU - Kamler, Chad

AU - Diaz, Martin

AU - Sharma, Shuchi

AU - Huguenin-Love, James

AU - Olejniček, Jiři

AU - Darveau, Scott A.

AU - Exstrom, Christopher L.

PY - 2008

Y1 - 2008

N2 - It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B 2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.

AB - It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B 2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.

UR - http://www.scopus.com/inward/record.url?scp=84879736663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879736663&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2008.4922546

DO - 10.1109/PVSC.2008.4922546

M3 - Conference contribution

AN - SCOPUS:84879736663

SN - 9781424416417

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

Y2 - 11 May 2008 through 16 May 2008

ER -