Experimental investigation of cubic to hexagonal ratio for GaN layers deposited on 3C-SiC/Si

J. Camassel, P. Vicente, N. Planes, J. Allègre, J. Pankove, F. Namavar

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We report results of a comparative investigation of GaN layers deposited on 3C-SiC/Si. Checking for the cubic form, neither X-ray nor micro-Raman scattering experiments could give an unambiguous answer. We show that selective excitation of the low temperature photoluminescence (LTPL) spectrum is a much better tool. Indeed, in many cases, a clear cubic signature was resolved around 3.25 eV (bound exciton feature) which exhibited, from time-resolved spectroscopy, a reasonably short decay-time of a few hundred picoseconds. From comparison of the corresponding intensity with the pure hexagonal one, we estimated the cubic/hexagonal ratio to range from negligibly small to ≈16%.

Original languageEnglish (US)
Pages (from-to)253-257
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
StatePublished - Nov 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Experimental investigation of cubic to hexagonal ratio for GaN layers deposited on 3C-SiC/Si'. Together they form a unique fingerprint.

Cite this