We report results of a comparative investigation of GaN layers deposited on 3C-SiC/Si. Checking for the cubic form, neither X-ray nor micro-Raman scattering experiments could give an unambiguous answer. We show that selective excitation of the low temperature photoluminescence (LTPL) spectrum is a much better tool. Indeed, in many cases, a clear cubic signature was resolved around 3.25 eV (bound exciton feature) which exhibited, from time-resolved spectroscopy, a reasonably short decay-time of a few hundred picoseconds. From comparison of the corresponding intensity with the pure hexagonal one, we estimated the cubic/hexagonal ratio to range from negligibly small to ≈16%.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physica Status Solidi (B) Basic Research|
|State||Published - Nov 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics