Fabrication of nanopillars by nanosphere lithography

C. L. Cheung, R. J. Nikolić, C. E. Reinhardt, T. F. Wang

Research output: Contribution to journalArticle

232 Scopus citations

Abstract

A low cost nanosphere lithography method for patterning and generation of semiconductor nanostructures provides a potential alternative to the conventional top-down fabrication techniques. Forests of silicon pillars of sub-500 nm diameter and with an aspect ratio up to 10 were fabricated using a combination of the nanosphere lithography and deep reactive ion etching techniques. The nanosphere etch mask coated silicon substrates were etched using oxygen plasma and a time-multiplexed 'Bosch' process to produce nanopillars of different length, diameter and separation. Scanning electron microscopy data indicate that the silicon etch rates with the nanoscale etch masks decrease linearly with increasing aspect ratio of the resulting etch structures.

Original languageEnglish (US)
Pages (from-to)1339-1343
Number of pages5
JournalNanotechnology
Volume17
Issue number5
DOIs
StatePublished - Mar 14 2006

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Cheung, C. L., Nikolić, R. J., Reinhardt, C. E., & Wang, T. F. (2006). Fabrication of nanopillars by nanosphere lithography. Nanotechnology, 17(5), 1339-1343. https://doi.org/10.1088/0957-4484/17/5/028