Pillar detector is an innovative solid state device structure that leverages advanced semiconductor fabrication technology to produce a device for thermal neutron detection. State-of-the-art thermal neutron detectors have shortcomings in achieving simultaneously high efficiency, low operating voltage while maintaining adequate fieldability performance. By using a 3-dimensional silicon PIN diode pillar array filled with isotopic boron 10, (10B) a high efficiency device is theoretically possible. The fabricated pillar structures reported in this work are composed of 2 μm diameter silicon pillars with a 4 μm pitch and pillar heights of 6 and 12 μm. The pillar detector with a 12 μm height achieved a thermal neutron detection efficiency of 7.3% at 2V.