Far-infrared magnetooptic generalized ellipsometry: Determination of free-charge-carrier parameters in semiconductor thin film structures

Mathias Schubert; Tino Hofmann; Craig M. Herzinger

doi:10.1016/j.tsf.2003.11.215

Far-infrared magnetooptic generalized ellipsometry: Determination of free-charge-carrier parameters in semiconductor thin film structures

Mathias Schubert, Tino Hofmann, Craig M. Herzinger

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We report on the application of generalized ellipsometry at far-infrared wavelengths (150-600 cm^-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures within an external magnetic field. Measurement of normalized Mueller matrix elements allows for independent determination of the free-charge-carrier parameters density, mobility and effective mass for semiconductor alloy materials in layered structures upon application of the Drude model, thereby dispensing with the need for electrical measurements. Examples reviewed here include n-type/i-type GaAs, n-type GaAs/n-type Al_0.19Ga_0.33In _0.48P/i-type GaAs, and n-type B_0.03In _0.06Ga_0.91As/i-type GaAs layer structures, measured at room-temperature and magnetic fields up to ±3 T.

Original language	English (US)
Pages (from-to)	563-570
Number of pages	8
Journal	Thin Solid Films
Volume	455-456
DOIs	https://doi.org/10.1016/j.tsf.2003.11.215
State	Published - May 1 2004
Externally published	Yes
Event	The 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria Duration: Jul 6 2003 → Jul 11 2003

Keywords

Drude model
Free-charge-carrier
Generalized ellipsometry
Magneto-optics
Mueller matrix

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2003.11.215

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@article{62a741d309c346cca7530483c13d09f6,

title = "Far-infrared magnetooptic generalized ellipsometry: Determination of free-charge-carrier parameters in semiconductor thin film structures",

abstract = "We report on the application of generalized ellipsometry at far-infrared wavelengths (150-600 cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures within an external magnetic field. Measurement of normalized Mueller matrix elements allows for independent determination of the free-charge-carrier parameters density, mobility and effective mass for semiconductor alloy materials in layered structures upon application of the Drude model, thereby dispensing with the need for electrical measurements. Examples reviewed here include n-type/i-type GaAs, n-type GaAs/n-type Al0.19Ga0.33In 0.48P/i-type GaAs, and n-type B0.03In 0.06Ga0.91As/i-type GaAs layer structures, measured at room-temperature and magnetic fields up to ±3 T.",

keywords = "Drude model, Free-charge-carrier, Generalized ellipsometry, Magneto-optics, Mueller matrix",

author = "Mathias Schubert and Tino Hofmann and Herzinger, {Craig M.}",

note = "Funding Information: We thank Dr. Ines Pietzonka and Dr. Klaus Streubel, OSRAM Opto Semiconductors Regensburg, for providing the AlGaInP sample, and Gunnar Leibiger and Dr. Volker Gottschalch, Universit{\"a}t Leipzig, for providing the GaAs and BInGaAs samples. The authors acknowledge Prof. John A. Woollam and Daniel W. Thompson of the University of Nebraska-Lincoln (UNL) for continuing interest and technical help. Financial support for this study was provided in part by UNL, by the Bundesministerium f{\"u}r Bildung und Forschung within the Wachstumskern INNOCIS (FKZ 03WKI09), and by the JOANNEUM Forschungsgesellschaft, Graz, Austria.; The 3rd International Conference on Spectroscopic Ellipsometry ; Conference date: 06-07-2003 Through 11-07-2003",

year = "2004",

month = may,

day = "1",

doi = "10.1016/j.tsf.2003.11.215",

language = "English (US)",

volume = "455-456",

pages = "563--570",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Far-infrared magnetooptic generalized ellipsometry

T2 - The 3rd International Conference on Spectroscopic Ellipsometry

AU - Schubert, Mathias

AU - Hofmann, Tino

AU - Herzinger, Craig M.

N1 - Funding Information: We thank Dr. Ines Pietzonka and Dr. Klaus Streubel, OSRAM Opto Semiconductors Regensburg, for providing the AlGaInP sample, and Gunnar Leibiger and Dr. Volker Gottschalch, Universität Leipzig, for providing the GaAs and BInGaAs samples. The authors acknowledge Prof. John A. Woollam and Daniel W. Thompson of the University of Nebraska-Lincoln (UNL) for continuing interest and technical help. Financial support for this study was provided in part by UNL, by the Bundesministerium für Bildung und Forschung within the Wachstumskern INNOCIS (FKZ 03WKI09), and by the JOANNEUM Forschungsgesellschaft, Graz, Austria.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - We report on the application of generalized ellipsometry at far-infrared wavelengths (150-600 cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures within an external magnetic field. Measurement of normalized Mueller matrix elements allows for independent determination of the free-charge-carrier parameters density, mobility and effective mass for semiconductor alloy materials in layered structures upon application of the Drude model, thereby dispensing with the need for electrical measurements. Examples reviewed here include n-type/i-type GaAs, n-type GaAs/n-type Al0.19Ga0.33In 0.48P/i-type GaAs, and n-type B0.03In 0.06Ga0.91As/i-type GaAs layer structures, measured at room-temperature and magnetic fields up to ±3 T.

AB - We report on the application of generalized ellipsometry at far-infrared wavelengths (150-600 cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures within an external magnetic field. Measurement of normalized Mueller matrix elements allows for independent determination of the free-charge-carrier parameters density, mobility and effective mass for semiconductor alloy materials in layered structures upon application of the Drude model, thereby dispensing with the need for electrical measurements. Examples reviewed here include n-type/i-type GaAs, n-type GaAs/n-type Al0.19Ga0.33In 0.48P/i-type GaAs, and n-type B0.03In 0.06Ga0.91As/i-type GaAs layer structures, measured at room-temperature and magnetic fields up to ±3 T.

KW - Drude model

KW - Free-charge-carrier

KW - Generalized ellipsometry

KW - Magneto-optics

KW - Mueller matrix

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SN - 0040-6090

VL - 455-456

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EP - 570

JO - Thin Solid Films

JF - Thin Solid Films

Y2 - 6 July 2003 through 11 July 2003

ER -

Far-infrared magnetooptic generalized ellipsometry: Determination of free-charge-carrier parameters in semiconductor thin film structures

Abstract

Keywords

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