Ferroelectric field effect transistors using very thin ferroelectric polyvinylidene fluoride copolymer films as gate dielectrics

A. Gerber, M. Fitsilis, R. Waser, Timothy J. Reece, E. Rije, Stephen Ducharme, H. Kohlstedt

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

We report electrical characterization of memory elements consisting of a p-type silicon field-effect transistor incorporating a ferroelectric polymer Langmuir-Blodgett film into the gate insulator to produce bistability through polarization hysteresis. The thin gate insulator, consisting of a 10 nm thick silicon oxide layer and a 35 nm thick ferroelectric polymer film, enabled bistable operation at 4 V. Device hysteresis as a function of gate voltage was evident both in the device capacitance, which was measured between the gate and drain, and in the source-drain conductance. The ferroelectric film polarization was not saturated, even up to operating voltages of 10 V. This is likely the reason for the short state retention of less than 10 s at room temperature. The hysteresis vanished as the sample was heated toward the ferroelectric- paraelectric phase transition temperature, showing that the bistability was due to ferroelectric polarization reversal.

Original languageEnglish (US)
Article number124119
JournalJournal of Applied Physics
Volume107
Issue number12
DOIs
StatePublished - Jun 15 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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