Ferroelectric switch for spin injection

M. Ye Zhuravlev, S. S. Jaswal, E. Y. Tsymbal, R. F. Sabirianov

Research output: Contribution to journalArticlepeer-review

101 Scopus citations


A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.

Original languageEnglish (US)
Article number222114
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number22
StatePublished - 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Ferroelectric switch for spin injection'. Together they form a unique fingerprint.

Cite this