Abstract
A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.
| Original language | English (US) |
|---|---|
| Article number | 222114 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 87 |
| Issue number | 22 |
| DOIs | |
| State | Published - 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Zhuravlev, M. Y., Jaswal, S. S., Tsymbal, E. Y., & Sabirianov, R. F. (2005). Ferroelectric switch for spin injection. Applied Physics Letters, 87(22), 1-3. [222114]. https://doi.org/10.1063/1.2138365