Ferroelectric switch for spin injection

M. Ye Zhuravlev, S. S. Jaswal, E. Y. Tsymbal, R. F. Sabirianov

Research output: Contribution to journalArticle

101 Scopus citations

Abstract

A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.

Original languageEnglish (US)
Article number222114
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number22
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Zhuravlev, M. Y., Jaswal, S. S., Tsymbal, E. Y., & Sabirianov, R. F. (2005). Ferroelectric switch for spin injection. Applied Physics Letters, 87(22), 1-3. [222114]. https://doi.org/10.1063/1.2138365