Ferroelectric switch for spin injection

M. Ye Zhuravlev; S. S. Jaswal; E. Y. Tsymbal; R. F. Sabirianov

doi:10.1063/1.2138365

Ferroelectric switch for spin injection

M. Ye Zhuravlev, S. S. Jaswal, E. Y. Tsymbal, R. F. Sabirianov

Physics

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.

Original language	English (US)
Article number	222114
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	22
DOIs	https://doi.org/10.1063/1.2138365
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Ferroelectric switch for spin injection",

abstract = "A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.",

author = "Zhuravlev, {M. Ye} and Jaswal, {S. S.} and Tsymbal, {E. Y.} and Sabirianov, {R. F.}",

note = "Funding Information: This work is supported by NSF (Grants Nos. DMR-0203359 and MRSEC: DMR-0213808), W. M. Keck Foundation, and the Nebraska Research Initiative. ",

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AU - Zhuravlev, M. Ye

AU - Jaswal, S. S.

AU - Tsymbal, E. Y.

AU - Sabirianov, R. F.

N1 - Funding Information: This work is supported by NSF (Grants Nos. DMR-0203359 and MRSEC: DMR-0213808), W. M. Keck Foundation, and the Nebraska Research Initiative.

PY - 2005

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N2 - A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.

AB - A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.

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Ferroelectric switch for spin injection

Abstract

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