Few-layered titanium trisulfide (TiS3) field-effect transistors

Alexey Lipatov; Peter M. Wilson; Mikhail Shekhirev; Jacob D. Teeter; Ross Netusil; Alexander Sinitskii

doi:10.1039/c5nr01895a

Few-layered titanium trisulfide (TiS₃) field-effect transistors

Alexey Lipatov, Peter M. Wilson, Mikhail Shekhirev, Jacob D. Teeter, Ross Netusil, Alexander Sinitskii

Research output: Contribution to journal › Article › peer-review

124 Scopus citations

Abstract

Titanium trisulfide (TiS₃) is a promising layered semiconductor material. Several-mm-long TiS₃ whiskers can be conveniently grown by the direct reaction of titanium and sulfur. In this study, we exfoliated these whiskers using the adhesive tape approach and fabricated few-layered TiS₃ field-effect transistors (FETs). The TiS₃ FETs showed an n-type electronic transport with room-temperature field-effect mobilities of 18-24 cm² V^-1 s^-1 and ON/OFF ratios up to 300. We demonstrate that TiS₃ is compatible with the conventional atomic layer deposition (ALD) procedure for Al₂O₃. ALD of alumina on TiS₃ FETs resulted in mobility increase up to 43 cm² V^-1 s^-1, ON/OFF ratios up to 7000, and much improved subthreshold swing characteristics. This study shows that TiS₃ is a competitive electronic material in the family of two-dimensional (2D) transition metal chalcogenides and can be considered for emerging device applications.

Original language	English (US)
Pages (from-to)	12291-12296
Number of pages	6
Journal	Nanoscale
Volume	7
Issue number	29
DOIs	https://doi.org/10.1039/c5nr01895a
State	Published - Aug 7 2015

ASJC Scopus subject areas

General Materials Science

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title = "Few-layered titanium trisulfide (TiS3) field-effect transistors",

abstract = "Titanium trisulfide (TiS3) is a promising layered semiconductor material. Several-mm-long TiS3 whiskers can be conveniently grown by the direct reaction of titanium and sulfur. In this study, we exfoliated these whiskers using the adhesive tape approach and fabricated few-layered TiS3 field-effect transistors (FETs). The TiS3 FETs showed an n-type electronic transport with room-temperature field-effect mobilities of 18-24 cm2 V-1 s-1 and ON/OFF ratios up to 300. We demonstrate that TiS3 is compatible with the conventional atomic layer deposition (ALD) procedure for Al2O3. ALD of alumina on TiS3 FETs resulted in mobility increase up to 43 cm2 V-1 s-1, ON/OFF ratios up to 7000, and much improved subthreshold swing characteristics. This study shows that TiS3 is a competitive electronic material in the family of two-dimensional (2D) transition metal chalcogenides and can be considered for emerging device applications.",

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AU - Lipatov, Alexey

AU - Wilson, Peter M.

AU - Shekhirev, Mikhail

AU - Teeter, Jacob D.

AU - Netusil, Ross

AU - Sinitskii, Alexander

N1 - Publisher Copyright: © The Royal Society of Chemistry.

PY - 2015/8/7

Y1 - 2015/8/7

N2 - Titanium trisulfide (TiS3) is a promising layered semiconductor material. Several-mm-long TiS3 whiskers can be conveniently grown by the direct reaction of titanium and sulfur. In this study, we exfoliated these whiskers using the adhesive tape approach and fabricated few-layered TiS3 field-effect transistors (FETs). The TiS3 FETs showed an n-type electronic transport with room-temperature field-effect mobilities of 18-24 cm2 V-1 s-1 and ON/OFF ratios up to 300. We demonstrate that TiS3 is compatible with the conventional atomic layer deposition (ALD) procedure for Al2O3. ALD of alumina on TiS3 FETs resulted in mobility increase up to 43 cm2 V-1 s-1, ON/OFF ratios up to 7000, and much improved subthreshold swing characteristics. This study shows that TiS3 is a competitive electronic material in the family of two-dimensional (2D) transition metal chalcogenides and can be considered for emerging device applications.

AB - Titanium trisulfide (TiS3) is a promising layered semiconductor material. Several-mm-long TiS3 whiskers can be conveniently grown by the direct reaction of titanium and sulfur. In this study, we exfoliated these whiskers using the adhesive tape approach and fabricated few-layered TiS3 field-effect transistors (FETs). The TiS3 FETs showed an n-type electronic transport with room-temperature field-effect mobilities of 18-24 cm2 V-1 s-1 and ON/OFF ratios up to 300. We demonstrate that TiS3 is compatible with the conventional atomic layer deposition (ALD) procedure for Al2O3. ALD of alumina on TiS3 FETs resulted in mobility increase up to 43 cm2 V-1 s-1, ON/OFF ratios up to 7000, and much improved subthreshold swing characteristics. This study shows that TiS3 is a competitive electronic material in the family of two-dimensional (2D) transition metal chalcogenides and can be considered for emerging device applications.

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Few-layered titanium trisulfide (TiS₃) field-effect transistors

Abstract

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