Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition

Ying Su; Jing Zhao; Li Lü; Man On Lai; Wen Dong Song; Yong Feng Lu

doi:10.1117/12.456874

Film growth on single MgO and SiO₂ covered Si substrate by pulsed laser deposition

Ying Su, Jing Zhao, Li Lü, Man On Lai, Wen Dong Song, Yong Feng Lu

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO₂ covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO₂ interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO₂ and MgO indicating interfacial reaction between SiO₂ and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.

Original language	English (US)
Pages (from-to)	248-251
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4426
DOIs	https://doi.org/10.1117/12.456874
State	Published - 2002
Externally published	Yes
Event	Second International Symposium on Laser Precision Microfabrication - Singapore, Singapore Duration: May 16 2001 → May 18 2001

Keywords

Diffusion
Epitaxial growth
Interface
MgO
PLD
STO
YBCO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.456874

Cite this

@article{f0e47581e7154fa0bd8b7272145660e7,

title = "Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition",

abstract = "STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO2 interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.",

keywords = "Diffusion, Epitaxial growth, Interface, MgO, PLD, STO, YBCO",

author = "Ying Su and Jing Zhao and Li L{\"u} and Lai, {Man On} and Song, {Wen Dong} and Lu, {Yong Feng}",

year = "2002",

doi = "10.1117/12.456874",

language = "English (US)",

volume = "4426",

pages = "248--251",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Second International Symposium on Laser Precision Microfabrication ; Conference date: 16-05-2001 Through 18-05-2001",

}

TY - JOUR

T1 - Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition

AU - Su, Ying

AU - Zhao, Jing

AU - Lü, Li

AU - Lai, Man On

AU - Song, Wen Dong

AU - Lu, Yong Feng

PY - 2002

Y1 - 2002

N2 - STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO2 interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.

AB - STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO2 interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.

KW - Diffusion

KW - Epitaxial growth

KW - Interface

KW - MgO

KW - PLD

KW - STO

KW - YBCO

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DO - 10.1117/12.456874

M3 - Conference article

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SN - 0277-786X

VL - 4426

SP - 248

EP - 251

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Second International Symposium on Laser Precision Microfabrication

Y2 - 16 May 2001 through 18 May 2001

ER -