Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition

Ying Su, Jing Zhao, Li Lü, Man On Lai, Wen Dong Song, Yong Feng Lu

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO2 interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.

Original languageEnglish (US)
Pages (from-to)248-251
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2002
Externally publishedYes
EventSecond International Symposium on Laser Precision Microfabrication - Singapore, Singapore
Duration: May 16 2001May 18 2001


  • Diffusion
  • Epitaxial growth
  • Interface
  • MgO
  • PLD
  • STO
  • YBCO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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