Formation of CuIn1 - XAlxSe2 thin films studied by Raman scattering

J. Olejníček; C. A. Kamler; S. A. Darveau; C. L. Exstrom; L. E. Slaymaker; A. R. Vandeventer; N. J. Ianno; R. J. Soukup

doi:10.1016/j.tsf.2011.02.030

Formation of CuIn_{1 - X}Al_xSe₂ thin films studied by Raman scattering

J. Olejníček, C. A. Kamler, S. A. Darveau, C. L. Exstrom, L. E. Slaymaker, A. R. Vandeventer, N. J. Ianno, R. J. Soukup

Chemistry

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

CuIn_{1 - x}Al_xSe₂ (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu - In - Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cm^{- 1} with resolution of 0.3 cm^{- 1}. Sequential formation of In_xSe_y, Cu_{2 - x}Se, CuInSe₂ (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn_{1 - x}Al_xSe₂ products, the A₁ phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm^{- 1} to 186 cm ^{- 1}.

Original language	English (US)
Pages (from-to)	5329-5334
Number of pages	6
Journal	Thin Solid Films
Volume	519
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2011.02.030
State	Published - Jun 1 2011

Keywords

Chalcopyrites
Copper Aluminium Indium Selenide
Raman Spectroscopy
Solar cells
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2011.02.030

Cite this

@article{e552ba7c5778491d803893516d586717,

title = "Formation of CuIn1 - XAlxSe2 thin films studied by Raman scattering",

abstract = "CuIn1 - xAlxSe2 (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu - In - Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cm- 1 with resolution of 0.3 cm- 1. Sequential formation of InxSey, Cu2 - xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn1 - xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm- 1 to 186 cm - 1.",

keywords = "Chalcopyrites, Copper Aluminium Indium Selenide, Raman Spectroscopy, Solar cells, X-ray diffraction",

author = "J. Olejn{\'i}{\v c}ek and Kamler, {C. A.} and Darveau, {S. A.} and Exstrom, {C. L.} and Slaymaker, {L. E.} and Vandeventer, {A. R.} and Ianno, {N. J.} and Soukup, {R. J.}",

year = "2011",

month = jun,

day = "1",

doi = "10.1016/j.tsf.2011.02.030",

language = "English (US)",

volume = "519",

pages = "5329--5334",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "16",

}

TY - JOUR

T1 - Formation of CuIn1 - XAlxSe2 thin films studied by Raman scattering

AU - Olejníček, J.

AU - Kamler, C. A.

AU - Darveau, S. A.

AU - Exstrom, C. L.

AU - Slaymaker, L. E.

AU - Vandeventer, A. R.

AU - Ianno, N. J.

AU - Soukup, R. J.

PY - 2011/6/1

Y1 - 2011/6/1

N2 - CuIn1 - xAlxSe2 (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu - In - Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cm- 1 with resolution of 0.3 cm- 1. Sequential formation of InxSey, Cu2 - xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn1 - xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm- 1 to 186 cm - 1.

AB - CuIn1 - xAlxSe2 (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu - In - Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cm- 1 with resolution of 0.3 cm- 1. Sequential formation of InxSey, Cu2 - xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn1 - xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm- 1 to 186 cm - 1.

KW - Chalcopyrites

KW - Copper Aluminium Indium Selenide

KW - Raman Spectroscopy

KW - Solar cells

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=79958004729&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958004729&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.02.030

DO - 10.1016/j.tsf.2011.02.030

M3 - Article

AN - SCOPUS:79958004729

SN - 0040-6090

VL - 519

SP - 5329

EP - 5334

JO - Thin Solid Films

JF - Thin Solid Films

IS - 16

ER -