Formation of CuIn1 - XAlxSe2 thin films studied by Raman scattering

J. Olejníček, C. A. Kamler, S. A. Darveau, C. L. Exstrom, L. E. Slaymaker, A. R. Vandeventer, N. J. Ianno, R. J. Soukup

Research output: Contribution to journalArticlepeer-review

36 Scopus citations


CuIn1 - xAlxSe2 (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu - In - Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cm- 1 with resolution of 0.3 cm- 1. Sequential formation of InxSey, Cu2 - xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn1 - xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm- 1 to 186 cm - 1.

Original languageEnglish (US)
Pages (from-to)5329-5334
Number of pages6
JournalThin Solid Films
Issue number16
StatePublished - Jun 1 2011


  • Chalcopyrites
  • Copper Aluminium Indium Selenide
  • Raman Spectroscopy
  • Solar cells
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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