Formation of metallic, crystalline NiSi2 thin film on amorphous SiO2/Si

Li Luo, M. Nastasi, C. J. Maggiore, R. F. Pinizzotto, H. Yang, F. Namavar

Research output: Contribution to journalArticlepeer-review


Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO 2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.

Original languageEnglish (US)
Pages (from-to)4107-4109
Number of pages3
JournalJournal of Applied Physics
Issue number8
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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