Formation of metallic, crystalline NiSi2 thin film on amorphous SiO2/Si

Li Luo; M. Nastasi; C. J. Maggiore; R. F. Pinizzotto; H. Yang; F. Namavar

doi:10.1063/1.352843

Formation of metallic, crystalline NiSi₂ thin film on amorphous SiO₂/Si

Li Luo, M. Nastasi, C. J. Maggiore, R. F. Pinizzotto, H. Yang, F. Namavar

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Abstract

Thin metallic, oriented crystalline NiSi₂ films that are suitable for additional epitaxial growth have been formed on amorphous SiO ₂ layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi₂ film as if the SiO₂ is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi₂ films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.

Original language	English (US)
Pages (from-to)	4107-4109
Number of pages	3
Journal	Journal of Applied Physics
Volume	73
Issue number	8
DOIs	https://doi.org/10.1063/1.352843
State	Published - 1993
Externally published	Yes

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General Physics and Astronomy

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title = "Formation of metallic, crystalline NiSi2 thin film on amorphous SiO2/Si",

abstract = "Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO 2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.",

author = "Li Luo and M. Nastasi and Maggiore, {C. J.} and Pinizzotto, {R. F.} and H. Yang and F. Namavar",

year = "1993",

doi = "10.1063/1.352843",

language = "English (US)",

volume = "73",

pages = "4107--4109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Formation of metallic, crystalline NiSi2 thin film on amorphous SiO2/Si

AU - Luo, Li

AU - Nastasi, M.

AU - Maggiore, C. J.

AU - Pinizzotto, R. F.

AU - Yang, H.

AU - Namavar, F.

PY - 1993

Y1 - 1993

N2 - Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO 2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.

AB - Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO 2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.

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DO - 10.1063/1.352843

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SP - 4107

EP - 4109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Formation of metallic, crystalline NiSi₂ thin film on amorphous SiO₂/Si

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