Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry

M. Schubert; J. A. Woollam; A. Kasic; B. Rheinländer; J. Off; B. Kuhn; F. Scholz

doi:10.1002/(SICI)1521-3951(199911)216:1<655::AID-PSSB655>3.0.CO;2-8

Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry

M. Schubert, J. A. Woollam, A. Kasic, B. Rheinländer, J. Off, B. Kuhn, F. Scholz

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.

Original language	English (US)
Pages (from-to)	655-658
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	216
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<655::AID-PSSB655>3.0.CO;2-8
State	Published - Nov 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/(SICI)1521-3951(199911)216:1<655::AID-PSSB655>3.0.CO;2-8

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abstract = "We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.",

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T1 - Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry

AU - Schubert, M.

AU - Woollam, J. A.

AU - Kasic, A.

AU - Rheinländer, B.

AU - Off, J.

AU - Kuhn, B.

AU - Scholz, F.

PY - 1999/11

Y1 - 1999/11

N2 - We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.

AB - We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.

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Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry

Abstract

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