We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physica Status Solidi (B) Basic Research|
|State||Published - Nov 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics