Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry

M. Schubert, J. A. Woollam, A. Kasic, B. Rheinländer, J. Off, B. Kuhn, F. Scholz

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.

Original languageEnglish (US)
Pages (from-to)655-658
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
StatePublished - Nov 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry'. Together they form a unique fingerprint.

  • Cite this