Abstract
We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.
Original language | English (US) |
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Pages (from-to) | 2604-2607 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 519 |
Issue number | 9 |
DOIs | |
State | Published - Feb 28 2011 |
Keywords
- Homojunction
- Isotype
- Silicon
- Spectroscopic ellipsometry
- Terahertz
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry