Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

A. Boosalis; T. Hofmann; J. Šik; M. Schubert

doi:10.1016/j.tsf.2010.11.092

Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

A. Boosalis, T. Hofmann, J. Šik, M. Schubert

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.

Original language	English (US)
Pages (from-to)	2604-2607
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	9
DOIs	https://doi.org/10.1016/j.tsf.2010.11.092
State	Published - Feb 28 2011

Keywords

Homojunction
Isotype
Silicon
Spectroscopic ellipsometry
Terahertz

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.11.092

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title = "Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry",

abstract = "We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.",

keywords = "Homojunction, Isotype, Silicon, Spectroscopic ellipsometry, Terahertz",

author = "A. Boosalis and T. Hofmann and J. {\v S}ik and M. Schubert",

note = "Funding Information: The authors would like to acknowledge the financial support from the Army Research Office (D. Woolard, contract number W911NF-09-C-0097 ), the National Science Foundation (MRSEC DMR-0820521 , MRI DMR-0922937 , and DMR-0907475 ), the University of Nebraska-Lincoln , and the J.A. Woollam Foundation .",

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doi = "10.1016/j.tsf.2010.11.092",

language = "English (US)",

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TY - JOUR

T1 - Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

AU - Boosalis, A.

AU - Hofmann, T.

AU - Šik, J.

AU - Schubert, M.

N1 - Funding Information: The authors would like to acknowledge the financial support from the Army Research Office (D. Woolard, contract number W911NF-09-C-0097 ), the National Science Foundation (MRSEC DMR-0820521 , MRI DMR-0922937 , and DMR-0907475 ), the University of Nebraska-Lincoln , and the J.A. Woollam Foundation .

PY - 2011/2/28

Y1 - 2011/2/28

N2 - We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.

AB - We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.

KW - Homojunction

KW - Isotype

KW - Silicon

KW - Spectroscopic ellipsometry

KW - Terahertz

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U2 - 10.1016/j.tsf.2010.11.092

DO - 10.1016/j.tsf.2010.11.092

M3 - Article

AN - SCOPUS:79952627198

SN - 0040-6090

VL - 519

SP - 2604

EP - 2607

JO - Thin Solid Films

JF - Thin Solid Films

IS - 9

ER -

Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

Abstract

Keywords

ASJC Scopus subject areas

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