Free electron behavior in InN: On the role of dislocations and surface electron accumulation

V. Darakchieva; T. Hofmann; M. Schubert; B. E. Sernelius; B. Monemar; P. O.Å Persson; F. Giuliani; E. Alves; H. Lu; W. J. Schaff

doi:10.1063/1.3065030

Free electron behavior in InN: On the role of dislocations and surface electron accumulation

V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, B. Monemar, P. O.Å Persson, F. Giuliani, E. Alves, H. Lu, W. J. Schaff

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

The free electron behavior in InN is studied on the basis of decoupled bulk and surface accumulation electron densities in InN films measured by contactless optical Hall effect. It is shown that the variation in the bulk electron density with film thickness does not follow the models of free electrons generated by dislocation-associated nitrogen vacancies. This finding, further supported by transmission electron microscopy results, indicates the existence of a different thickness-dependent doping mechanism. Furthermore, we observe a noticeable dependence of the surface electron density on the bulk density, which can be exploited for tuning the surface charge in future InN based devices.

Original language	English (US)
Article number	022109
Journal	Applied Physics Letters
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.3065030
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3065030

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title = "Free electron behavior in InN: On the role of dislocations and surface electron accumulation",

abstract = "The free electron behavior in InN is studied on the basis of decoupled bulk and surface accumulation electron densities in InN films measured by contactless optical Hall effect. It is shown that the variation in the bulk electron density with film thickness does not follow the models of free electrons generated by dislocation-associated nitrogen vacancies. This finding, further supported by transmission electron microscopy results, indicates the existence of a different thickness-dependent doping mechanism. Furthermore, we observe a noticeable dependence of the surface electron density on the bulk density, which can be exploited for tuning the surface charge in future InN based devices.",

author = "V. Darakchieva and T. Hofmann and M. Schubert and Sernelius, {B. E.} and B. Monemar and Persson, {P. O.{\AA}} and F. Giuliani and E. Alves and H. Lu and Schaff, {W. J.}",

note = "Funding Information: The Swedish Research Council (VR, Contract No. 2005–5054) and FCT Portugal (Program Ci{\^e}ncia 2007) are acknowledged for financial support. Part of the work is supported by NSF in MRSEC QSPIN at UNL (Grant No. NSF-ECCS-824920), by (U.S.) Army Research Office, and J. A. Woollam Foundation.",

year = "2009",

doi = "10.1063/1.3065030",

language = "English (US)",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Free electron behavior in InN

T2 - On the role of dislocations and surface electron accumulation

AU - Darakchieva, V.

AU - Hofmann, T.

AU - Schubert, M.

AU - Sernelius, B. E.

AU - Monemar, B.

AU - Persson, P. O.Å

AU - Giuliani, F.

AU - Alves, E.

AU - Lu, H.

AU - Schaff, W. J.

N1 - Funding Information: The Swedish Research Council (VR, Contract No. 2005–5054) and FCT Portugal (Program Ciência 2007) are acknowledged for financial support. Part of the work is supported by NSF in MRSEC QSPIN at UNL (Grant No. NSF-ECCS-824920), by (U.S.) Army Research Office, and J. A. Woollam Foundation.

PY - 2009

Y1 - 2009

N2 - The free electron behavior in InN is studied on the basis of decoupled bulk and surface accumulation electron densities in InN films measured by contactless optical Hall effect. It is shown that the variation in the bulk electron density with film thickness does not follow the models of free electrons generated by dislocation-associated nitrogen vacancies. This finding, further supported by transmission electron microscopy results, indicates the existence of a different thickness-dependent doping mechanism. Furthermore, we observe a noticeable dependence of the surface electron density on the bulk density, which can be exploited for tuning the surface charge in future InN based devices.

AB - The free electron behavior in InN is studied on the basis of decoupled bulk and surface accumulation electron densities in InN films measured by contactless optical Hall effect. It is shown that the variation in the bulk electron density with film thickness does not follow the models of free electrons generated by dislocation-associated nitrogen vacancies. This finding, further supported by transmission electron microscopy results, indicates the existence of a different thickness-dependent doping mechanism. Furthermore, we observe a noticeable dependence of the surface electron density on the bulk density, which can be exploited for tuning the surface charge in future InN based devices.

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Free electron behavior in InN: On the role of dislocations and surface electron accumulation

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