GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic Ellipsometry

Kenneth G. Merkel, Paul G. Snyder, John A. Woollam, Samuel A. Alterovitz

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Variable angle of incidence spectroscopic ellipsometry (VASE) was used to determine the thickness, alloy composition, and growth quality of multilayer samples. These samples contained a single quantum well grown on a GaAs/AlGaAs superlattice. The superlattice layers were modeled as a bulk AlGaAs layer of unknown composition and thickness. A data fitting procedure allowed the variation of five layer thicknesses and two alloy compositions in a regression analysis. Extremely good data fits of the ellipsometric parameters ψ and ∆ were realized in the 1.55 to 3.54 eV spectral range. Computer generations of the ellipsometric parameters were performed, and were compared with experimental results. The e-hh(1), e-lh (1), and e-hh(2) exciton transitions were observed in the VASE data measured at room temperature. VASE has thus provided a nondestructive and highly effective technique for characterizing intricate multilayered structures.

Original languageEnglish (US)
Pages (from-to)105-111
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Aug 9 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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