GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic Ellipsometry

Kenneth G. Merkel; Paul G. Snyder; John A. Woollam; Samuel A. Alterovitz

doi:10.1117/12.947418

GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic Ellipsometry

Kenneth G. Merkel, Paul G. Snyder, John A. Woollam, Samuel A. Alterovitz

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Variable angle of incidence spectroscopic ellipsometry (VASE) was used to determine the thickness, alloy composition, and growth quality of multilayer samples. These samples contained a single quantum well grown on a GaAs/AlGaAs superlattice. The superlattice layers were modeled as a bulk AlGaAs layer of unknown composition and thickness. A data fitting procedure allowed the variation of five layer thicknesses and two alloy compositions in a regression analysis. Extremely good data fits of the ellipsometric parameters ψ and ∆ were realized in the 1.55 to 3.54 eV spectral range. Computer generations of the ellipsometric parameters were performed, and were compared with experimental results. The e-hh(1), e-lh (1), and e-hh(2) exciton transitions were observed in the VASE data measured at room temperature. VASE has thus provided a nondestructive and highly effective technique for characterizing intricate multilayered structures.

Original language	English (US)
Pages (from-to)	105-111
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	946
DOIs	https://doi.org/10.1117/12.947418
State	Published - Aug 9 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{6304c9e8a66b42efb93e2c11309cd0d4,

title = "GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic Ellipsometry",

abstract = "Variable angle of incidence spectroscopic ellipsometry (VASE) was used to determine the thickness, alloy composition, and growth quality of multilayer samples. These samples contained a single quantum well grown on a GaAs/AlGaAs superlattice. The superlattice layers were modeled as a bulk AlGaAs layer of unknown composition and thickness. A data fitting procedure allowed the variation of five layer thicknesses and two alloy compositions in a regression analysis. Extremely good data fits of the ellipsometric parameters ψ and ∆ were realized in the 1.55 to 3.54 eV spectral range. Computer generations of the ellipsometric parameters were performed, and were compared with experimental results. The e-hh(1), e-lh (1), and e-hh(2) exciton transitions were observed in the VASE data measured at room temperature. VASE has thus provided a nondestructive and highly effective technique for characterizing intricate multilayered structures.",

author = "Merkel, {Kenneth G.} and Snyder, {Paul G.} and Woollam, {John A.} and Alterovitz, {Samuel A.}",

note = "Funding Information: This research was supported by NASA Lewis Research Center grant NAG-3-154. The authors would like to thank D. C. Radulescu and L. F. Eastman of Cornell University for providing the samples.",

year = "1988",

month = aug,

day = "9",

doi = "10.1117/12.947418",

language = "English (US)",

volume = "946",

pages = "105--111",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic Ellipsometry

AU - Merkel, Kenneth G.

AU - Snyder, Paul G.

AU - Woollam, John A.

AU - Alterovitz, Samuel A.

N1 - Funding Information: This research was supported by NASA Lewis Research Center grant NAG-3-154. The authors would like to thank D. C. Radulescu and L. F. Eastman of Cornell University for providing the samples.

PY - 1988/8/9

Y1 - 1988/8/9

N2 - Variable angle of incidence spectroscopic ellipsometry (VASE) was used to determine the thickness, alloy composition, and growth quality of multilayer samples. These samples contained a single quantum well grown on a GaAs/AlGaAs superlattice. The superlattice layers were modeled as a bulk AlGaAs layer of unknown composition and thickness. A data fitting procedure allowed the variation of five layer thicknesses and two alloy compositions in a regression analysis. Extremely good data fits of the ellipsometric parameters ψ and ∆ were realized in the 1.55 to 3.54 eV spectral range. Computer generations of the ellipsometric parameters were performed, and were compared with experimental results. The e-hh(1), e-lh (1), and e-hh(2) exciton transitions were observed in the VASE data measured at room temperature. VASE has thus provided a nondestructive and highly effective technique for characterizing intricate multilayered structures.

AB - Variable angle of incidence spectroscopic ellipsometry (VASE) was used to determine the thickness, alloy composition, and growth quality of multilayer samples. These samples contained a single quantum well grown on a GaAs/AlGaAs superlattice. The superlattice layers were modeled as a bulk AlGaAs layer of unknown composition and thickness. A data fitting procedure allowed the variation of five layer thicknesses and two alloy compositions in a regression analysis. Extremely good data fits of the ellipsometric parameters ψ and ∆ were realized in the 1.55 to 3.54 eV spectral range. Computer generations of the ellipsometric parameters were performed, and were compared with experimental results. The e-hh(1), e-lh (1), and e-hh(2) exciton transitions were observed in the VASE data measured at room temperature. VASE has thus provided a nondestructive and highly effective technique for characterizing intricate multilayered structures.

UR - http://www.scopus.com/inward/record.url?scp=84913941368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84913941368&partnerID=8YFLogxK

U2 - 10.1117/12.947418

DO - 10.1117/12.947418

M3 - Article

AN - SCOPUS:84913941368

SN - 0277-786X

VL - 946

SP - 105

EP - 111

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic Ellipsometry

Abstract

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