Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors

Michael Randle, Alexey Lipatov, Avinash Kumar, Chun Pui Kwan, Jubin Nathawat, Bilal Barut, Shenchu Yin, Keke He, Nargess Arabchigavkani, Ripudaman Dixit, Takeshi Komesu, José Avila, Maria C. Asensio, Peter A. Dowben, Alexander Sinitskii, Uttam Singisetti, Jonathan P. Bird

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


We explore the electrical characteristics of TiS 3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-insulator transition (MIT) in their transfer curves. Their roomerature mobility is ∼20-30 cm 2 /(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials. In the insulating state (<â220 K), the transfer curves exhibit unusual mesoscopic fluctuations and a current suppression near zero bias that is common to charge-density wave (CDW) systems. The fluctuations have a nonmonotonic temperature dependence and wash out at a temperature close to that of the bulk MIT, suggesting they may be a feature of quantum interference in the CDW state. Overall, our results demonstrate that quasi-1D TiS 3 nanostructures represent a viable candidate for FET realization and that their functionality is influenced by complex phenomena.

Original languageEnglish (US)
Pages (from-to)803-811
Number of pages9
JournalACS Nano
Issue number1
StatePublished - Jan 22 2019


  • charge-density wave
  • metalâinsulator transition,
  • one-dimensional nanostructures
  • titanium trisulfide
  • transition-metal trichalcogenides

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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